Datasheet > MBR1540CT

MBR1540CT

更新时间： 2024-11-27 22:46:23

品牌	Logo	应用领域
TSC		二极管
页数	文件大小	规格书
3页	290K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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MBR1540CT 数据手册

东莞市华远电子有限公司

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.

TEL 86-769-5335378 86-769-5305266

FEX 86-769-5316189

TO-220 Plastic-Encapsulate Transistors

MBR1530CT-MBR1560CT

TO— 220

SCHOTTKY BARRIER RECTIFIER

FEATURES

· Schottky Barrier Chip

1.ANODE

· Guard Ring Die Construction for Transient Protection

· Low Power Loss, High Efficiency

2.CATHODE

· High Surge Capability

1 2 3

· High Current Capability and Low Forward Voltage Drop

· For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

3.ANODE

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

MBR

Characteristic

Symbol

Unit

1530CT

1535CT

1540CT

1545CT

1550CT

1560CT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

PMS Reverse Voltage

V_R(RMS)

I_O

24.5

31.5

Average Rectified Output Current

(Note 1)

@ T_C=105℃

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

I_FSM

150

rated load

(JEDEC Method)

Forward Voltage Drop @ I_F=7.5A, T_C=125℃

0.57

0.65

V_FM

@ I_F=7.5A, T_C= 25℃

0.70

0.1

0.75

1.0

Peak Reverse Current

@ T_C= 25℃

@ T_C=125℃

I_RM

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

C_j

300

-65 to +150

T_j,T_STG

℃

Notes: 1. Thermal resistance junction to case mounted heatsink.

2. Measured at 1.OMHz and applied reverse voltage of 4.0V D

12 3

中文翻译

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