Datasheet > 二极管 > 整流二极管> MBR1535CTTRLPBF

MBR1535CTTRLPBF

更新时间： 2024-11-28 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	129K
描述
Schottky Rectifier, 2 x 7.5 A

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MBR1535CTTRLPBF 数据手册

VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series

Vishay High Power Products

Schottky Rectifier, 2 x 7.5 A

VS-MBR15..CT-1PbF

FEATURES

• 150 °C T_Joperation

VS-MBRB15..CTPbF

• Center tap TO-220 package

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Base

common

cathode

Base

common

cathode

• Guard ring for enhanced ruggedness and long

term reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Halogen-free according to IEC 61249-2-21 definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

Common

cathode

Common

cathode

Anode

D²PAK

TO-262

DESCRIPTION

The VS-MBR(B)15... center tap Schottky rectifier has been

optimized for low reverse leakage at high temperature. The

proprietary barrier technology allows for reliable operation

up to 150 °C junction temperature. Typical applications are

in switching power supplies, converters, freewheeling

diodes, and reverse battery protection.

PRODUCT SUMMARY

I_F(AV)

2 x 7.5 A

35 V/45 V

V_R

I_RM

15 mA at 125 °C

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

35/45

690

t_p= 5 μs sine

V_F

7.5 Apk, T_J= 125 °C

0.57

T_J

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

VS-MBRB1535CTPbF

VS-MBR1535CT-1PbF

VS-MBRB1545CTPbF

VS-MBR1545CT-1PbF

SYMBOL

UNITS

Maximum DC reverse voltage

V_R

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 131 °C, rated V_R

VALUES

UNITS

per leg

7.5

Maximum average

forward current

I_F(AV)

per device

5 μs sine or 3 μs Following any rated load condition

rect. pulse and with rated V_RRMapplied

690

Maximum peak one cycle

non-repetitive surge

I_FSM

Surge applied at rated load conditions halfwave,

single phase, 60 Hz

150

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 2 A, L = 3.5 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Document Number: 94303

Revision: 15-Mar-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6

中文翻译

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与MBR1535CTTRLPBF相关器件

型号	品牌	获取价格	描述	数据表
MBR1535CTTRRP	VISHAY	获取价格	Schottky Rectifier, 2 x 7.5 A
MBR1535CTTRRPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 7.5 A
MBR154	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
MBR1540	MCC	获取价格	15 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR1540	KERSEMI	获取价格	Metal of siliconrectifier, majonty carrier conducton
MBR1540	LUNSURE	获取价格	15Amp schottky barrier rectifier 20to100 volts
MBR1540	LGE	获取价格	肖特基二极管
MBR1540-B	MCC	获取价格	Rectifier Diode,
MBR1540-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 40V V(RRM), Silicon, TO-220AC,
MBR1540CT	SIRECTIFIER	获取价格	肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二

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