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MBR1535CT PDF预览

MBR1535CT

更新时间: 2024-11-24 22:34:39
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
2页 69K
描述
15A SCHOTTKY BARRIER RECTIFIER

MBR1535CT 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40

MBR1535CT 数据手册

 浏览型号MBR1535CT的Datasheet PDF文件第2页 
MBR1530CT - MBR1560CT  
15A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
TO-220AB  
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
L
Dim  
A
B
C
D
E
Min  
14.22  
9.65  
2.54  
5.84  
¾
Max  
15.88  
10.67  
3.43  
B
M
C
D
E
·
·
K
A
6.86  
6.35  
1
2
3
G
H
J
12.70  
2.29  
0.51  
14.73  
2.79  
G
1.14  
J
N
Mechanical Data  
K
L
3.53Æ 4.09Æ  
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Marking: Type Number  
Weight: 2.24 grams (approx.)  
Mounting Position: Any  
3.56  
1.14  
0.30  
2.03  
4.83  
1.40  
0.64  
2.92  
H
H
P
M
N
P
Pin 1 +  
Pin 2 -  
Pin 3 +  
+
·
·
·
·
Case  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristic  
Symbol  
Unit  
1530CT 1535CT 1540CT 1545CT 1550CT 1560CT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
@ TC = 125°C  
15  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
150  
A
Forward Voltage Drop  
@ IF = 7.5A, TC = 125°C  
0.57  
0.70  
0.65  
0.75  
VFM  
IRM  
V
@ IF = 7.5A, TC  
=
25°C  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC  
=
25°C  
0.1  
15  
1.0  
50  
mA  
@ TC = 125°C  
Cj  
Typical Junction Capacitance  
(Note 2)  
300  
1.7  
pF  
°C/W  
V/ms  
°C  
RqJc  
Typical Thermal Resistance Junction to Case  
Voltage Rate of Change (Rated VR)  
(Note 1)  
dV/dt  
Tj, TSTG  
1000  
10,000  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS23013 Rev. F-2  
1 of 2  
MBR1530CT - MBR1560CT  

MBR1535CT 替代型号

型号 品牌 替代类型 描述 数据表
MBR1535CT-BP MCC

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Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 35V V(RRM), Silicon, TO-220AB, ROHS C

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