Datasheet > MBR10U60FCT

MBR10U60FCT

更新时间： 2024-10-03 01:15:51

品牌	Logo	应用领域
纽航 - NIUHANG		/
页数	文件大小	规格书
5页	464K
描述
SUPER LOW VF SCHOTTKY RECTIFIERS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR10U60FCT 数据手册

Niu Hang

Electronic Co. Ltd

Specification

For Approval

MBR10U60CT,MBR10U60FCT

SUPER LOW VF SCHOTTKY RECTIFIERS

60 Volts

10 Ampers

Marking

TO-220-3L

VOLTAGE

CURRENT

ITO-220AB

FEATURES

· Power pack

MBR10U60CT

MBR10U60FCT

· Metal silicon junction ,majority carrier conduction

· Guard ring for overvoltage protection

· Low power loss ,high efficiency

Case

· High current capability ,low forward voltage drop

· High forward surge capability

xxxx

· High frequency operation

MBR10U60FC

MBR10U60CT

Solder bath temperature 275℃ maximum，10s，per JESD22-B106（for TO-220AB

and ITO-220AB package）

· Component in accordance to RoHS 2011/65/EU

MECHANICAL DATA

Case: JEDEC TO-220-3L、ITO-220AB

· Molding compound meets UL94V-0 flammability rating

· Terminals: Lead solderable per J-STD-002 and JESD22-B102

· Polarity: As marked

· Mounting Torque: 10 in-Ibs maximum

TYPICAL APPLICATIONS

For use in low voltage ,high frequency inverters ,DC/DC

converters,free wheeling ,and polarity protection applications

Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified )

Parameter

Symbol

MBR10U60CT/FCT

Unit

V_RRM

Maximum repetitive peak reverse voltage

Per leg

I _F(AV)

Maximum average forward rectified current(see fig.1)

Total device

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method at rated TL)

I _FSM

Per leg

120

I _RRM

T_J,T_STD

V_AC

Peak repetitive reverse current per diode at tp=2μs 1KHz

Operating junction and Storage temperature range

0.5

-55 to +150

1500

℃

Isolation voltage(ITO-220AB only)from terminals to heatsink t=1 min

Electrical Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified )

Symbol

Test Conditions

TYP.

0.405

0.460

0.360

0.420

MAX.

0.415

0.510

Unit

Parameter

IF=3.0A

IF=5.0A

IF=3.0A

IF=5.0A

T_A=25℃

T_A=100℃

T_A=125℃

T_A=25℃

Instaneous forward voltage per diode

V_F

T_A=125℃

150

V_R=60V

Reverse current per diode

Typical junction capacitance

I _R

C_J

4V,1MHz

570

Thermal Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified )

Parameter

Symbol

MBR10U60CT

2.5

MBR10U60FCT

4.5

Unit

Typical thermal resistance ^3）

R_θJC

℃/W

Notes: 1.Pulse test: pulse width≤40ms

2.Pulse test: 300 μs pulse width,1% duty cycle

3.Thermal resistance from junction to case

Http://www.nhel.com.cn

Data: 2014/10/20 Rev.: A/1

Page:

12 3 4 5

中文翻译

下载PDF

与MBR10U60FCT相关器件

型号	品牌	获取价格	描述	数据表
MBR10W	HY	获取价格	SILICON BRIDGE RECTIFIERS
MBR10X100CTH	SIRECT	获取价格	Power Schottky Rectifier - 10Amp 100Volt
MBR10X150CTH	SIRECT	获取价格	Power Schottky Rectifier - 10Amp 150Volt
MBR10XX	GOOD-ARK	获取价格	Schottky Barrier Rectifiers
MBR10xx	VISHAY	获取价格	Schottky Barrier Rectifier
MBR10xxx-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
MBR10XXX-E3_15	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
MBR1100	INFINEON	获取价格	SCHOTTKY RECTIFIER
MBR1100	DIGITRON	获取价格	Rectifier, Schottky; Max Peak Repetitive Reverse Voltage: 1; Max TMS Bridge Input Voltage:
MBR1100	MOTOROLA	获取价格	1A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE

与MBR10U60FCT相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR10U60FCT

MBR10U60FCT 数据手册

与MBR10U60FCT相关器件

与MBR10U60FCT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR10U60FCT

MBR10U60FCT 数据手册

与MBR10U60FCT相关器件

与MBR10U60FCT相关文章

您还可以找

您在本页遇到什么问题？