Datasheet > MBR10H100CT_11

MBR10H100CT_11

更新时间： 2024-09-26 11:12:07

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页数	文件大小	规格书
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描述
10.0AMPS. Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册

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MBR10H100CT_11 数据手册

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MBR10H100CT - MBR10H200CT

10.0AMPS. Schottky Barrier Rectifiers

TO-220AB

RoHS

COMPLIANCE

Features

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in power supply - output rectification, power

management, instrumentation

Guard-ring for overvoltage protection

High temperature soldering guaranteed:

260℃/10 seconds,0.25", (6.35mm) from case

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Dimensions in inches and (millimeters)

Marking Diagram

Mechanical Data

Cases: JEDEC TO-220AB molded plastic body

MBR10HXXCT = Specific Device Code

Terminals: Pure tin plated, lead free, solderable

per MIL-STD-750, Method 2026

= Green Compound

= Year

Polarity: As marked

Mounting position:Any

Mounting torque: 5 in. - lbs, max

Weight: 1.88 grams

= Work Week

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR

10H100CT

MBR

10H150CT

MBR

10H200CT

Symbol

Units

Type Number

Maximum Recurrent Peak Reverse Voltage

V_RRM

V_RMS

V_DC

100

150

200

Maximum RMS Voltage

105

150

140

200

Maximum DC Blocking Voltage

100

I_F(AV)

Maximum Average Forward Rectified Current

Peak Repetitive Forward Current

(Rated V_R, Square Wave, 20KHz)

I_FRM

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC Method)

I_FSM

I_RRM

120

Peak Repetitive Reverse Surge Current (Note 1)

1.0

0.5

Maximum Instantaneous Forward Voltage at: (Note 2)

IF=5A, T_A=25℃

0.85

0.75

0.95

0.85

0.88

0.75

0.97

0.85

IF=5A, T_A=125℃

V_F

IF=10A, T_A=25℃

IF=10A, T_A=125℃

Maximum Instantaneous Reverse Current at Rated

DC Blocking Voltage @ T_A=25 ℃

@ T_A=125 ℃

I_R

Voltage Rate of Change (Rated V_R)

10,000

1.5

dV/dt

R_θJC

T_J

V/us

^OC/W

^OC

Maximum Typical Thermal Resistance

Operating Junction Temperature Range

Storage Temperature Range

- 65 to + 175

^OC

T_STG

Note 1: 2.0uS Pulse Width, f=1.0 KHz

Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle

Version:F11

中文翻译

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与MBR10H100CT_11相关器件

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MBR10H100CT_14	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR10H100CTC0	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR10H100CTC0G	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR10H100CT-E3	VISHAY	获取价格	DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR10H100CT-E3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10H100CTG	ONSEMI	获取价格	SWITCHMODE Power Rectifier 100 V, 10 A
MBR10H100CTHC0	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR10H100CTHE3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10H100-E3/45	VISHAY	获取价格	High-Voltage Schottky Rectifier
MBR10H100HE3/45	VISHAY	获取价格	High-Voltage Schottky Rectifier

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