Datasheet > MBR1060H

MBR1060H

更新时间： 2024-09-18 07:08:11

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ASEMI		高压
页数	文件大小	规格书
3页	215K
描述
MBR1060 Dual High-Voltage Schottky Rectifiers

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中文翻译

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数据手册

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MBR1060H 数据手册

MBR1060 THUR MBR1065

Dual High-Voltage Schottky Rectifiers

REV:1.01

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 60V

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

IF(AV)= 10A

VRRM= 65V

IF(AV)= 10A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

● Low Voltage Continued Circuit and Protection Circuit.

Polarity

■ MBR1060、MBR1065 Schottky diode,in the manufacture uses

the main process technology includes: Silicon epitaxial

substrate, P+ loop technology,The potential metal and the

silicon alloy technology, the device uses the two chip, the

common cathode, the plastic half package structure.

Absolute Maximum Ratings

Item

Symbol MBR1060 MBR1065

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

VRRM

VDC

Unit

Average Rectified Forward Current TC=150℃

Device

Whole

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Electricity Character

Representat

ive

Test Condition

Unit

Item

Minimum

MBR1060 MBR1065

100

TJ =25℃

TJ =125℃

VF TJ =25℃

VR=VRRM

IF=5A

0.75

0.78

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