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MBR10100VL PDF预览

MBR10100VL

更新时间: 2024-01-28 07:38:26
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 447K
描述
1A Patch Schottky diode 100V SOD-123 series

MBR10100VL 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:R-PSFM-T2Reach Compliance Code:unknown
风险等级:5.6Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR10100VL 数据手册

 浏览型号MBR10100VL的Datasheet PDF文件第2页 
MBR1020VL - MBR10100VL  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
VOLTAGE RANGE: 20 - 100V  
CURRENT: 1.0 A  
Features  
!
!
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
!
!
Designed for Surface Mount Application  
Classification 94V-O  
B
C
E
Mechanical Data  
Case: SOD-123FL  
SOD-123FL  
!
Dim Min Max  
Typ  
3.58 3.72 3.65  
2.72 2.78 2.75  
1.77 1.83 1.80  
1.02 1.08 1.05  
0.097 1.03 1.00  
0.13 0.17 0.15  
0.53 0.57 0.55  
A
B
C
D
E
H
L
plastic body over passivated junction  
Terminals  
!
!
: Plated axial leads,  
D
Method 2026  
solderable per MIL-STD-750,  
H
Polarity  
Mounting Position  
!
!
: Color band denotes cathode end  
L
: Any  
All Dimensions in mm  
Weight:0.0007 ounce, 0.02 grams  
!
E
A
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Characteristic  
Symbol MBR1020VL MBR1030VL MBR1040VL MBR1060VL MBR10100VL Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
V
V
20  
30  
40  
60  
100  
V
A
RWM  
R
V
Forward Continuous Current (Note 1)  
1.0  
25  
F
I
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
A
FSM  
I
Power Dissipation (Note 1)  
450  
mW  
°C  
d
P
Operating and Storage Temperature Range  
-65 to +125  
j
STG  
T, T  
Characteristic  
Forward Voltage Drop  
Symbol MBR1020VL MBR1030VL MBR1040VL MBR1060VL  
Unit  
MBR10100VL  
F
FM  
@I = 1.0A  
V
0.45  
0.55  
0.55  
500  
50  
0.70  
0.85  
V
RRM  
RM  
Peak Reverse Leakage Current @ V  
Typical Junction Capacitance  
I
µA  
pF  
j
C
Note: 1. Valid provided that terminals are kept at ambient temperature.  
1 of 2  
www.sunmate.tw  

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