Datasheet > MBR10100LCT

MBR10100LCT

更新时间： 2024-01-13 21:24:59

品牌	Logo	应用领域
平伟 - PINGWEI		/
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1页	213K
描述
High current capability

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MBR10100LCT 数据手册

MBR1045L(F,B,H)CT thru MBR10200L(F,B,H)CT

10A Schottky Barrier Rectifier

FEATURE



High current capability

Low forward voltage drop

Low power loss, high efficiency

High surge capability

High ESD capability

TO-220AB

ITO-220AB

High temperature soldering guaranteed:

260°C/10s/0.25"(6.35mm) from case

MBR10XXLCT

MBR10XXLFCT

MECHANICAL DATA



Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy



Mounting position: any

TO-263

TO-262

TYPICALAPPLICATIONS

MBR10XXLBCT

MBR10XXLHCT

For use in low voltage, high frequency rectifier of switching mode

power supplies, freewheeling diodes, DC/DC converters and

polarity protection application.

Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS

MBR1045 MBR1060 MBR10100 MBR10150 MBR10200

Parameter

Symbol

units

LCT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

105

200

140

Maximum DC Blocking Voltage

total device

per diode

10.0

5.0

Maximum Average Forward Rectified

I_F(AV)

I_FSM

Current at T_C=90°C

Peak Forward Surge Current 8.3ms Single Half sine-wave

superimposed on rate load per diode (JEDEC method)

Junction Capacitance (Note1)

120

C_J

T_STG

T_J

700

300

°C

Storage Temperature Range

-55 to +150

Operation Temperature Range

ELECTRONICAL CHARACTERISTICS

MBR10100 MBR10150 MBR10200

MBR1045 MBR1060

Parameter

Symbol

units

LCT

Maximum Forward Voltage Drop per diode at 5A (Note 2)

V_F

I_R

0.55

0.65

0.80

0.85

0.1

0.90

@ T_C=25°C

@ T_C=100°C

0.15

40.0

Maximum DC Reverse Current at rated

DC blocking voltage (Note 2)

20.0

THERMAL CHARACTERISTICS

TO-262

TO-263

ITO-220

TO-220

units

Parameter

Symbol

Typical Thermal Resistance (Note 3)

R_{th (JC)}

3.5

2.5

°C/W

Note:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.

2. Pulse test: 300 μs pulse width, 1% duty cycle.

3. Thermal Resistance from Junction to Case Mounted on heatsink.

- 页码 -

Rev. 14-1

http:// www.perfectway.cn

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