Datasheet > MBR10100L-F-CT

MBR10100L-F-CT

更新时间： 2024-01-31 14:40:23

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	1507K
描述
TO-220 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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MBR10100L-F-CT 数据手册

MBR10100L(F)CT

HD TO82

TO-220 Plastic-Encapsulate Diodes

Schottky Rectifier

Features

●I

10A

ITO- 220AB

TO- 220AB

100V

●VRRM

●High surge current capability

●

Low Vf

Applications

●Rectifier

Marking

● MBR10100L(F)CT

PIN 1

PIN 3

PIN 2

CASE

MBR10100L(F)CT

Item

Symbol

V_RRM

I_o

Unit

Test Conditions

Repetitive Peak Reverse Voltage

Average Rectified Output Current

100

10.0

60HZ Half-sine wave, Resistance

load, Tc(Fig.1)

Surge(Non-repetitive)Forward

Current

I_FSM

120

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

Junction Temperature

Storage Temperature

T_J

℃

-55~+150

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃ Unless otherwise specified）

MBR10100L(F)CT

Item

Symbol

Unit

Test Condition

V_F

I_F=5.0A

Peak Forward Voltage

Peak Reverse Current

0.73(TYP)

0.78(MAX)

I_RRM1

I_RRM2

T =25℃

0.1

V_RM=V_RRM

T =125℃

2.5

Thermal

Resistance(Typical)

2.0¹⁾

R_θ

℃/W

Between junction and case

J-C

Notes:

Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate

igh Diode Semiconductor

12 3 4

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