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MBR10100FCT-BP-HF PDF预览

MBR10100FCT-BP-HF

更新时间: 2024-10-02 13:11:11
品牌 Logo 应用领域
美微科 - MCC 二极管瞄准线功效
页数 文件大小 规格书
2页 881K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MBR10100FCT-BP-HF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:ITO-220AB, 3 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.1Is Samacsys:N
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:120 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V最大反向电流:100 µA
表面贴装:NO技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR10100FCT-BP-HF 数据手册

 浏览型号MBR10100FCT-BP-HF的Datasheet PDF文件第2页 
M C C  
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ꢍꢎꢍꢏꢎꢅꢐꢑꢉꢒꢂꢉꢅꢓꢑꢌ  
ꢆꢔꢉꢑꢒꢕꢄꢃꢑꢔꢖꢅꢆꢗꢅꢘꢎꢙꢎꢎ  
ꢚꢔꢄꢛꢈꢜꢅꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢙ  
$ꢉ%ꢜꢅ   ꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢘ  
MBR1080CT  
THRU  
MBR10100CT  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
Low power loss high efficiency  
High surge capacity, High current capability  
10 Amp  
Schottky Barrier  
Rectifier  
80-100 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +175°C  
TO-220AB  
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
80V  
Maximum Maximum  
B
L
RMS  
DC  
M
Voltage  
Blocking  
Voltage  
C
D
A
K
MBR1080CT MBR1080CT  
MBR10100CT MBR10100CT 100V  
56V  
70V  
80V  
100V  
E
F
PIN  
2
1
3
G
I
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified  
H
H
Average Forward  
Current  
IF(AV)  
10A  
TC = 100°C  
PIN 1  
PIN 3  
PIN 2  
CASE  
Peak Forward Surge  
Current  
IFSM  
120A  
8.3ms, half sine  
Maximum Forward  
Voltage Drop Per  
Element  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢀ ꢀ ꢀ ꢀ  
IFM = 5A  
INCHES  
MM  
VF  
.85V  
.75V  
25°C  
TJ =  
TJ =  
ꢁꢂꢃ  
A
B
ꢃꢂꢄ  
.560  
.380  
.100  
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
ꢄꢇꢈꢉ  
.625  
.420  
.135  
125°C  
C
2.54  
D
E
F
G
H
I
J
K
.230  
.380  
------  
.500  
.090  
.020  
.012  
.270  
.420  
.250  
.580  
.110  
.045  
.025  
5.84  
9.65  
------  
12.70  
2.29  
0.51  
0.30  
3.53  
6.86  
10.67  
6.35  
14.73  
2.79  
1.14  
0.64  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
0.2mA TJ = 25°C  
IR  
TJ = 125°C  
15mA  
.139  
.161  
4.09  
L
M
N
.140  
.045  
.080  
.190  
.055  
.115  
3.56  
1.14  
2.03  
4.83  
1.40  
2.92  
Typical Junction  
Capacitance  
CJ  
Measured at  
1.0MHz, VR=4.0V  
300pF  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www. mccsemi.com  

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