MBR10100CT

更新时间： 2024-11-19 22:46:23

品牌	Logo	应用领域
美微科 - MCC		二极管瞄准线功效
页数	文件大小	规格书
2页	881K
描述
10 Am p Schott ky Barrier Rectifier 80-100 Volts

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中文翻译

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数据手册

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MBR10100CT 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆꢄꢃꢋꢌ

ꢍꢎꢍꢏꢎꢅꢐꢑꢉꢒꢂꢉꢅꢓꢑꢌ

ꢆꢔꢉꢑꢒꢕꢄꢃꢑꢔꢖꢅꢆꢗꢅꢘꢎꢙꢎꢎ

ꢚꢔꢄꢛꢈꢜꢅꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢙ

$ꢉ%ꢜꢅ ꢅ ꢅ ꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢘ

MBR1080CT

THRU

MBR10100CT

Features

Metal of siliconrectifier, majonty carrier conducton

Guard ring for transient protection

Low power loss high efficiency

High surge capacity, High current capability

10 Amp

Schottky Barrier

Rectifier

80-100 Volts

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +175°C

TO-220AB

Microsemi

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

80V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

MBR1080CT MBR1080CT

MBR10100CT MBR10100CT 100V

56V

70V

80V

100V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

10A

T_C= 100°C

PIN 1

PIN 3

PIN 2

CASE

Peak Forward Surge

Current

I_FSM

120A

8.3ms, half sine

Maximum Forward

Voltage Drop Per

Element

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

ꢀ ꢀ ꢀ ꢀ

I_FM= 5A

INCHES

V_F

.85V

.75V

25°C

T^J=

ꢁꢂꢃ

ꢃꢂꢄ

.560

.380

.100

ꢃꢅꢆ

ꢃꢂꢄ

14.22

9.65

ꢃꢅꢆ

15.88

10.67

3.43

ꢄꢇꢈꢉ

.625

.420

.135

125°C

2.54

.230

.380

------

.500

.090

.020

.012

.270

.420

.250

.580

.110

.045

.025

5.84

9.65

------

12.70

2.29

0.51

0.30

3.53

6.86

10.67

6.35

14.73

2.79

1.14

0.64

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

0.2mA T_J= 25°C

T_J= 125°C

15mA

.139

.161

4.09

.140

.045

.080

.190

.055

.115

3.56

1.14

2.03

4.83

1.40

2.92

Typical Junction

Capacitance

C_J

Measured at

1.0MHz, V_R=4.0V

300pF

*Pulse test: Pulse width 300 msec, Duty cycle 2%

www. mccsemi.com

中文翻译

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