Datasheet > MBR10100CT

MBR10100CT

更新时间： 2024-11-19 17:14:59

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
3页	59K
描述
TO-220

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中文翻译

获取价格

数据手册

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MBR10100CT 数据手册

TAK CHEON

^®

SEMICONDUCTOR

30A/200V SCHOTTKY BARRIER

DIODE

Dual High Voltage Schottky Rectifier

TO-220AB

Specification Features:

DEVICE MARKING DIAGRAM

§ High Voltage 200V

§ High Switching Speed Device

§ Low Forward Voltage Drop

§ Low Power Loss and High Efficiency

§ Guard Ring for Over-voltage Protection

§ High Surge Capability

§ RoHS Compliant

§ Matte Tin(Sn) Lead Finish

§ Terminal Leads Surface is Corrosion Resistant

and can withstand to 260°C Wave Soldering or

per MIL-STD-750, Method 2026.

POLARITY CONFIGURATION

1. Anode

3. Anode

2. Cathode

MAXIMUM RATINGS (Per Leg, unless otherwise specified )

Symbol

Parameter

MBR30200CT

Units

V_RRM

V_RWM

V_R

Maximum Repetitive Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Reverse Voltage

Average Rectified Forward Current

Per Leg

Per Package

Non-repetitive Peak Forward Surge Current

8.3mS Single Phase @ Rated Load

200

I_F(AV)

I_FSM

250

T_STG

T_J

Storage Temperature Range

-55 to +150

+150

°C

Operating Junction Temperature

These ratings are limiting values above which the serviceability of the diode may be impaired.

THERMAL CHARACTERISTICS

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Unit

R_qJC

Maximum Thermal Resistance, Junction-to-Case

2.5

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode )

T_A= 25°C unless otherwise noted

Limit

Test Condition

Symbol

Parameter

Reverse Current

Units

(Note 1)

Min

---

Max

I_R

@ 200V

I_F= 15A per leg

I_F= 10A per leg

V_R=4V, f = 1MHz

0.90

0.83

300

V_F

C_J

Forward Voltage

---

Junction capacitance

Note 1: Tested under pulse condition of 300mS.

Number: DB-323

Mar 2020,Revision A

Page 1

12 3

中文翻译

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