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MBR10100-M3/4W PDF预览

MBR10100-M3/4W

更新时间: 2024-01-13 08:28:22
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线高压功效局域网
页数 文件大小 规格书
4页 116K
描述
High-Voltage Schottky Rectifier

MBR10100-M3/4W 技术参数

生命周期:Active零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.07
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR10100-M3/4W 数据手册

 浏览型号MBR10100-M3/4W的Datasheet PDF文件第2页浏览型号MBR10100-M3/4W的Datasheet PDF文件第3页浏览型号MBR10100-M3/4W的Datasheet PDF文件第4页 
New Product  
MBR1090, MBR10100  
Vishay General Semiconductor  
High-Voltage Schottky Rectifier  
FEATURES  
• Trench MOS Schottky technology  
• Lower power losses, high efficiency  
• Low forward voltage drop  
TMBS®  
TO-220AC  
• High forward surge capability  
• High frequency operation  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21  
2
definition  
1
TYPICAL APPLICATIONS  
PIN 1  
PIN 2  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, DC/DC  
converters or polarity protection application.  
CASE  
MECHANICAL DATA  
Case: TO-220AC  
Molding compound meets UL 94 V-0 flammability  
rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
10 A  
Base P/N-M3 - halogen-free, RoHS compliant, and  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
VRRM  
IFSM  
90 V, 100 V  
150 A  
VF  
0.65 V  
M3 suffix meets JESD 201 class 1A whisker test  
TJ max.  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
VRWM  
VDC  
MBR1090  
MBR10100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
90  
90  
90  
V
V
V
A
100  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TC = 133 °C  
IF(AV)  
10  
150  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
Document Number: 89193  
Revision: 30-Nov-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

MBR10100-M3/4W 替代型号

型号 品牌 替代类型 描述 数据表
SBT10100 DIOTEC

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