Datasheet > MBR10100-M3

MBR10100-M3

更新时间： 2024-01-23 17:01:25

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	94K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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MBR10100-M3 数据手册

MBRB1090-M3, MBRB10100-M3

www.vishay.com

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-263AB

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

MBRB1090

MBRB10100

PIN 1

PIN 2

TYPICAL APPLICATIONS

HEATSINK

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters, or

polarity protection application.

PRIMARY CHARACTERISTICS

Package

TO-263AB

10 A

MECHANICAL DATA

I_F(AV)

Case: TO-263AB

V_RRM

90 V, 100 V

150 A

Molding compound meets UL 94 V-0 flammability rating

I_FSM

V_F

0.65 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

T_Jmax.

Diode variation

150 °C

Single die

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBRB1090

MBRB10100

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

100

V_RWM

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 133 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

150

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

MAX.

0.80

0.65

0.75

100

UNIT

I_F= 10 A

T_C= 25 °C

T_C= 125 °C

T_J= 25 °C

T_J= 125 °C

Maximum instantaneous

forward voltage

I_F= 10 A

I_F= 20 A

V_F

(1)

μA

Maximum reverse current per at working

peak reverse voltage ⁽²⁾

I_R

6.0

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Revision: 15-May-13

Document Number: 87981

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MBR10100-M3相关器件

型号	品牌	获取价格	描述	数据表
MBR10100-M3/4W	VISHAY	获取价格	High-Voltage Schottky Rectifier
MBR10100MFS	ONSEMI	获取价格	SWITCHMODE Power Rectifiers
MBR10100MFST1G	ONSEMI	获取价格	SWITCHMODE Power Rectifiers
MBR10100MFST3G	ONSEMI	获取价格	SWITCHMODE Power Rectifiers
MBR10100VL	SUNMATE	获取价格	1A Patch Schottky diode 100V SOD-123 series
MBR10100VS	JUXING	获取价格	Surface Mount Schottky Rectifiers
MBR10100VT	JUXING	获取价格	Surface Mount Schottky Rectifiers
MBR1010CT	DIODES	获取价格	10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
MBR1010FCT	KERSEMI	获取价格	Surge overload -240~500 amperes peak
MBR1010W	HY	获取价格	Silicon Bridge Rectifiers

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