Datasheet > MBR10100

MBR10100

更新时间： 2024-09-25 07:08:11

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描述
MBR1080 THUR MBR10100Dual High-Voltage Schottky Rectifiers

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MBR10100 数据手册

MBR1080 THUR MBR10100

Dual High-Voltage Schottky Rectifiers

REV:1.01

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 80V

IF(AV)= 10A

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

VRRM= 90V

IF(AV)= 10A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

VRRM= 100V

IF(AV)= 10A

● Low Voltage Continued Circuit and Protection Circuit.

■ MBR1080、MBR1090、MBR10100 Schottky diode,in the

manufacture uses the main process technology includes:

Silicon epitaxial substrate, P+ loop technology,The

potential metal and the silicon alloy technology, the

device uses the two chip, the common cathode, the plastic

package structure.

Polarity

Absolute Maximum Ratings

Item

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

MBR10100

100

Symbol MBR1080 MBR1090

Unit

VRRM

VDC

100

Average Rectified Forward Current TC=150℃

Device

Whole

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Electricity Character

Represent

ative

Test Condition

Item

Minimum

MBR1080 MBR1090MBR10100 Unit

100

TJ =25℃

TJ =125℃

VF TJ =25℃

VR=VRRM

IF=5A

0.84 0.85 0.86

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