Datasheet > MBR0540HP

MBR0540HP

更新时间： 2024-09-22 14:50:59

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	153K
描述
肖特基二极管

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中文翻译

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数据手册

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MBR0540HP 数据手册

MBR0540HP

Surface Mount Schottky Barrier Diode

Reverse Voltage - 40 V

Forward Current - 0.5 A

PINNING

DESCRIPTION

Cathode

Anode

Features

• Low forward voltage

• Peak forward current tested

Transparent top view

Simplified outline DFN1006-2H and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

0.5

Average Rectified Forward Current

Peak Forward Surge Current (t = 8.3 ms)

Operating Temperature Range

Junction Temperature

I_F(AV)

I_FSM

T_opr

- 40 to + 85

150

℃

T_J

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Symbol

R_θJA

Value

500

Unit

Parameter

Typical Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 200 µA

Forward Voltage

at I_F= 0.5 A

Reverse Current

at V_R= 40 V

V_F

I_R

0.55

200

µA

at V^R= 40 V, TJ = 125℃

Junction Capacitance

at V_R= 4 V, f = 1 MHz

C_j

1 / 3

Dated: 29/05/2023 Rev: 01

12 3

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