Datasheet > MBR0540

MBR0540

更新时间： 2023-12-06 20:10:25

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	175K
描述
肖特基二极管

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中文翻译

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数据手册

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MBR0540 数据手册

MBR0540

Surface Mount Schottky Barrier Diode

DESCRIPTION

Cathode

Features

Anode

• Low forward voltage

• High conductance

Top View

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

V_RRM

V_R

Peak Repetitive Reverse Voltage

Reverse Voltage

I_F(AV)

Average Rectified Forward Current

500

Non-Repetitive Peak Forward Surge Current

(Half Wave, Single Phase, 60 Hz)

I_FSM

5.5

T_j

Operating Junction Temperature Range

Storage Temperature Range

- 65 to + 150

℃

T_stg

Thermal Characteristics

Value

206

Parameter

Symbol

R_θJA

Unit

℃/W

Typical Thermal Resistance Junction to Ambient ¹⁾

R_θJL

118

Typical Thermal Resistance Junction to Lead

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 0.5 A

at I_F= 1 A

at I_F= 0.5 A, T_j= 100℃

at I_F= 1 A, T_j= 100℃

0.51

0.62

0.46

0.61

V_F

Reverse Current

at V_R= 20 V

at V_R= 40 V

at V_R= 20 V, T_j= 100℃

at V_R= 40 V, T_j= 100℃

µA

I_R

1 / 3

Dated : 05/09/2022 Rev:02

12 3

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