Datasheet > MBR0530BP

MBR0530BP

更新时间： 2024-11-02 14:50:47

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	196K
描述
肖特基二极管

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MBR0530BP 数据手册

MBR0530BP

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

•

Very Low Forward Voltage

Low reverse current

• Low capacitance

• Very high switching speed

Transparent top view

Marking Code: DM

Simplified outline DFN1006-2B and symbol

Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Forward current

I_F

500

Peak Forward Surge Current (tp = 8.3 ms)

Total Power Dissipation ¹⁾

I_FSM

P_D

190

Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 125

¹⁾Mounted onto a 4 in square FR-4 board 10 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.

Characteristics at T_a= 25℃

Value

520

Parameter

Symbol

R_θJA

Unit

Thermal Resistance Junction to Ambient Air ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25℃

Parameter

Symbol

V_F

Typ.

Max.

Unit

Forward Voltage

at I_F= 10 mA

at I_F= 100 mA

at I_F= 500 mA

0.37

0.46

0.62

0.38

at I_F= 500 mA , T_a= 125℃

Reverse Current

at V_R= 10 V

at V_R= 30 V

200

µA

I_R

3.7

at V_R= 30 V, T_a= 125℃

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_T

118.6

1 / 3

Dated: 26/05/2021 Rev: 02

12 3

中文翻译

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