Datasheet > MBR0530-AH

MBR0530-AH

更新时间： 2024-09-27 14:54:03

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	175K
描述
肖特基二极管

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MBR0530-AH 数据手册

MBR0530-AH

Surface Mount Schottky Barrier Diode

DESCRIPTION

Cathode

Features

Anode

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF),

RoHS compliant

Top View

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

V_RRM

V_RSM

V_R

Non-Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

Average Forward Rectified Current

Peak Forward Surge Current (8.3 ms Single Half Sine-wave)

Operating Junction Temperature Range

Storage Temperature Range

I_F(AV)

I_FSM

T_j

0.5

5.5

- 65 to + 125

℃

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

206

Unit

℃/W

Typical Thermal Resistance from Junction to Ambient ¹⁾

R_θJL

150

Typical Thermal Resistance from Junction to Lead

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25℃

Parameter

Reverse Breakdown Voltage

at I_R= 100 µA

Symbol

V_(BR)R

Min

Max.

Unit

Forward Voltage

at I_F= 100 mA

at I_F= 500 mA

V_F

0.375

0.5

Reverse Current

at V_R= 15 V

at V_R= 30 V

I_R

µA

130

1 / 3

Dated: 10/05/2023 Rev : 01

12 3

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