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MBM29SL800TE-90 PDF预览

MBM29SL800TE-90

更新时间: 2024-11-23 04:59:47
品牌 Logo 应用领域
飞索 - SPANSION 存储
页数 文件大小 规格书
52页 409K
描述
FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT

MBM29SL800TE-90 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20911-1E  
FLASH MEMORY  
CMOS  
8 M (1 M × 8/512 K × 16) BIT  
MBM29SL800TE/BE-90/10  
DESCRIPTION  
The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512  
Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages.  
These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP  
and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard  
EPROM programmers.  
(Continued)  
PRODUCT LINE UP  
Part No.  
MBM29SL800TE/BE-90  
MBM29SL800TE/BE-10  
VCC  
1.65 V to 1.95 V  
Max Address Access Time  
Max CE Access Time  
Max OE Access Time  
90 ns  
90 ns  
30 ns  
100 ns  
100 ns  
35 ns  
PACKAGES  
48-ball Plastic FBGA  
45-ball Plastic SCSP  
(BGA-48P-M20)  
(WLP-45P-M02)  

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