5秒后页面跳转
MBM29SL800TD-10TN PDF预览

MBM29SL800TD-10TN

更新时间: 2024-09-16 19:15:35
品牌 Logo 应用领域
富士通 - FUJITSU 光电二极管内存集成电路
页数 文件大小 规格书
55页 524K
描述
Flash, 512KX16, 100ns, PDSO48, PLASTIC, TSOP1-48

MBM29SL800TD-10TN 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP1包装说明:PLASTIC, TSOP1-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.29最长访问时间:100 ns
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,15端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:2 V编程电压:1.8 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.025 mA最大供电电压 (Vsup):2.2 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

MBM29SL800TD-10TN 数据手册

 浏览型号MBM29SL800TD-10TN的Datasheet PDF文件第2页浏览型号MBM29SL800TD-10TN的Datasheet PDF文件第3页浏览型号MBM29SL800TD-10TN的Datasheet PDF文件第4页浏览型号MBM29SL800TD-10TN的Datasheet PDF文件第5页浏览型号MBM29SL800TD-10TN的Datasheet PDF文件第6页浏览型号MBM29SL800TD-10TN的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20871-4E  
FLASH MEMORY  
CMOS  
8 M (1 M × 8/512 K × 16) BIT  
MBM29SL800TD/BD-10/12  
DESCRIPTION  
The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512  
Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball  
SCSP packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC  
supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be repro-  
grammed in standard EPROM programmers.  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = +2.0 V ± 0.2  
MBM29SL800TD/MBM29SL800BD  
Ordering Part No.  
10  
100  
100  
35  
12  
Max Address Access Time (ns)  
Max CE Access Time (ns)  
Max OE Access Time (ns)  
120  
120  
50  
PACKAGE  
48-pin Plastic TSOP (I)  
48-pin Plastic TSOP (I)  
48-pin Plastic FBGA  
48-pin Plastic SCSP  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  
(BGA-48P-M02)  
(WLP-48P-M03)  

与MBM29SL800TD-10TN相关器件

型号 品牌 获取价格 描述 数据表
MBM29SL800TD-10TN-E1 SPANSION

获取价格

Flash, 512KX16, 100ns, PDSO48, PLASTIC, TSOP1-48
MBM29SL800TD-10TR SPANSION

获取价格

暂无描述
MBM29SL800TD-10TR FUJITSU

获取价格

Flash, 512KX16, 100ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29SL800TD-10TR-E1 SPANSION

获取价格

Flash, 512KX16, 100ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29SL800TD-12PBT SPANSION

获取价格

FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800TD-12PBT-E1 SPANSION

获取价格

Flash, 512KX16, 120ns, PBGA48, PLASTIC, FBGA-48
MBM29SL800TD-12PFTN SPANSION

获取价格

FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800TD-12PFTN-E1 SPANSION

获取价格

Flash, 512KX16, 120ns, PDSO48, PLASTIC, TSOP1-48
MBM29SL800TD-12PFTR SPANSION

获取价格

FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800TD-12PFTR-E1 SPANSION

获取价格

Flash, 512KX16, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48