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MBM29SL800TD-10 PDF预览

MBM29SL800TD-10

更新时间: 2024-11-19 02:52:43
品牌 Logo 应用领域
飞索 - SPANSION 存储
页数 文件大小 规格书
56页 505K
描述
FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT

MBM29SL800TD-10 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20871-5E  
FLASH MEMORY  
CMOS  
8 M (1 M × 8/512 K × 16) BIT  
MBM29SL800TD/BD-10/12  
DESCRIPTION  
The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512  
Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball  
SCSP packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC  
supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be repro-  
grammed in standard EPROM programmers.  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = +2.0 V ± 0.2  
MBM29SL800TD/MBM29SL800BD  
Ordering Part No.  
10  
100  
100  
35  
12  
Max Address Access Time (ns)  
Max CE Access Time (ns)  
Max OE Access Time (ns)  
120  
120  
50  
PACKAGES  
48-pin Plastic TSOP (I)  
48-pin Plastic TSOP (I)  
48-pin Plastic FBGA  
48-pin Plastic SCSP  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  
(BGA-48P-M12)  
(WLP-48P-M03)  

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MBM29SL800TD-10PBT SPANSION

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FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800TD-10PBT-E1 SPANSION

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Flash, 512KX16, 100ns, PBGA48, PLASTIC, FBGA-48
MBM29SL800TD-10PFTN SPANSION

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FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800TD-10PFTR SPANSION

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FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800TD-10PFTR-E1 SPANSION

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Flash, 512KX16, 100ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29SL800TD-10PW SPANSION

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FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800TD-10TN FUJITSU

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Flash, 512KX16, 100ns, PDSO48, PLASTIC, TSOP1-48
MBM29SL800TD-10TN SPANSION

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Flash, 512KX16, 100ns, PDSO48, PLASTIC, TSOP1-48
MBM29SL800TD-10TN-E1 SPANSION

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Flash, 512KX16, 100ns, PDSO48, PLASTIC, TSOP1-48
MBM29SL800TD-10TR SPANSION

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