Datasheet > 存储 > 闪存> MBM29SL160TD-10

MBM29SL160TD-10

更新时间： 2024-09-14 22:08:23

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
61页	675K
描述
16M (2M x 8/1M x 16) BIT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBM29SL160TD-10 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20877-1E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT

MBM29SL160TD^-10/-12/MBM29SL160BD^-10/-12

■ FEATURES

• Single 1.8 V read, program, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E²PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

48-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

100 ns maximum access time

• Sector erase architecture

Eight 4K word and thirty one 32K word sectors in word mode

Eight 8K byte and thirty one 64K byte sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• One Time Protect (OTP) region

256 Byte of OTP, accessible through a new “OTP Enable” command sequence

Factory serialized and protected to provide a secure electronic serial number (ESN)

• WP/ACC input pin

At V^IL, allows protection of boot sectors, regardless of sector protection/unprotection status

At V^IH, allows removal of boot sector protection

At V^HH, increases program performance

• Embedded Erase^TMAlgorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program^TMAlgorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

(Continued)

Embedded Erase^TMand Embedded Program^TMare trademarks of Advanced Micro Devices, Inc.

12 3 4 5 6 7...61

中文翻译

下载PDF

与MBM29SL160TD-10相关器件

型号	品牌	获取价格	描述	数据表
MBM29SL160TD-10PBT	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT
MBM29SL160TD-10PFTN	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT
MBM29SL160TD-10PFTR	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT
MBM29SL160TD-12	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT
MBM29SL160TD-12PBT	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT
MBM29SL160TD-12PFTN	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT
MBM29SL160TD-12PFTR	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT
MBM29SL800BD-10PBT	SPANSION	获取价格	FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800BD-10PBT-E1	SPANSION	获取价格	Flash, 512KX16, 100ns, PBGA48, PLASTIC, FBGA-48
MBM29SL800BD-10PFTN	SPANSION	获取价格	FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT