Datasheet > 存储 > 闪存> MBM29LV400BC-90

MBM29LV400BC-90

更新时间： 2024-09-14 23:05:43

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
58页	560K
描述
4M (512K X 8/256K X 16) BIT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBM29LV400BC-90 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20862-3E

FLASH MEMORY

CMOS

4M (512K × 8/256K × 16) BIT

MBM29LV400TC^-70/-90/-12/MBM29LV400BC^-70/-90/-12

■ FEATURES

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E²PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

44-pin SOP (Package suffix: PF)

48-pin CSOP (Package suffix: PCV)

48-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

One 8K word, two 4K words, one 16K word, and seven 32K words sectors in word mode

One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded Erase^TMAlgorithms

Automatically preprograms and erases the chip or any sector

• Embedded Program^TMAlgorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode

• Low V^CCwrite inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

(Continued)

Embedded Erase^TMand Embedded Program^TMare trademarks of Advanced Micro Devices, Inc.

12 3 4 5 6 7...58

中文翻译

下载PDF

与MBM29LV400BC-90相关器件

型号	品牌	获取价格	描述	数据表
MBM29LV400BC-90PBT	SPANSION	获取价格	FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PBT	FUJITSU	获取价格	4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PCV	FUJITSU	获取价格	4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PCV	SPANSION	获取价格	FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PF	FUJITSU	获取价格	4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PF	SPANSION	获取价格	FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PFTN	SPANSION	获取价格	FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PFTN	FUJITSU	获取价格	4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PFTR	FUJITSU	获取价格	4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PFTR	SPANSION	获取价格	FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT