5秒后页面跳转
MBM29LV400BC-70PFTN PDF预览

MBM29LV400BC-70PFTN

更新时间: 2024-11-04 23:05:43
品牌 Logo 应用领域
富士通 - FUJITSU 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
58页 560K
描述
4M (512K X 8/256K X 16) BIT

MBM29LV400BC-70PFTN 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP1包装说明:PLASTIC, TSOP1-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.22最长访问时间:70 ns
其他特性:MINIMUM 100,000 PROGRAM/ERASE CYCLES备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,7
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.035 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

MBM29LV400BC-70PFTN 数据手册

 浏览型号MBM29LV400BC-70PFTN的Datasheet PDF文件第2页浏览型号MBM29LV400BC-70PFTN的Datasheet PDF文件第3页浏览型号MBM29LV400BC-70PFTN的Datasheet PDF文件第4页浏览型号MBM29LV400BC-70PFTN的Datasheet PDF文件第5页浏览型号MBM29LV400BC-70PFTN的Datasheet PDF文件第6页浏览型号MBM29LV400BC-70PFTN的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20862-3E  
FLASH MEMORY  
CMOS  
4M (512K × 8/256K × 16) BIT  
MBM29LV400TC-70/-90/-12/MBM29LV400BC-70/-90/-12  
FEATURES  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
• Compatible with JEDEC-standard commands  
Uses same software commands as E2PROMs  
• Compatible with JEDEC-standard world-wide pinouts  
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)  
44-pin SOP (Package suffix: PF)  
48-pin CSOP (Package suffix: PCV)  
48-ball FBGA (Package suffix: PBT)  
• Minimum 100,000 program/erase cycles  
• High performance  
70 ns maximum access time  
• Sector erase architecture  
One 8K word, two 4K words, one 16K word, and seven 32K words sectors in word mode  
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes sectors in byte mode  
Any combination of sectors can be concurrently erased. Also supports full chip erase  
• Boot Code Sector Architecture  
T = Top sector  
B = Bottom sector  
• Embedded EraseTM Algorithms  
Automatically preprograms and erases the chip or any sector  
• Embedded ProgramTM Algorithms  
Automatically writes and verifies data at specified address  
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion  
• Ready/Busy output (RY/BY)  
Hardware method for detection of program or erase cycle completion  
• Automatic sleep mode  
When addresses remain stable, automatically switch themselves to low power mode  
• Low VCC write inhibit 2.5 V  
• Erase Suspend/Resume  
Suspends the erase operation to allow a read in another sector within the same device  
(Continued)  
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  

MBM29LV400BC-70PFTN 替代型号

型号 品牌 替代类型 描述 数据表
MX29LV401BTI-70 Macronix

功能相似

4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

与MBM29LV400BC-70PFTN相关器件

型号 品牌 获取价格 描述 数据表
MBM29LV400BC-70PFTR SPANSION

获取价格

FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
MBM29LV400BC-70PFTR FUJITSU

获取价格

4M (512K X 8/256K X 16) BIT
MBM29LV400BC-70PW SPANSION

获取价格

FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
MBM29LV400BC-70PW FUJITSU

获取价格

Flash, 256KX16, 70ns, PBGA48, PLASTIC, CSP-48
MBM29LV400BC-90 FUJITSU

获取价格

4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PBT SPANSION

获取价格

FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PBT FUJITSU

获取价格

4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PCV FUJITSU

获取价格

4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PCV SPANSION

获取价格

FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
MBM29LV400BC-90PF FUJITSU

获取价格

4M (512K X 8/256K X 16) BIT