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MBM29LV320TE80 PDF预览

MBM29LV320TE80

更新时间: 2024-10-30 22:19:55
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
64页 816K
描述
32 M (4 M X 8/2 M X 16) BIT

MBM29LV320TE80 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20894-1E  
FLASH MEMORY  
CMOS  
32 M (4 M × 8/2 M × 16) BIT  
MBM29LV320TE80/90/10  
MBM29LV320BE80/90/10  
DESCRIPTION  
The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words  
of 16 bits each. The device is offered in a 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed  
to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required  
for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.  
The standard device offers access times 80 ns, 90 ns and 100 ns, allowing operation of high-speed microproces-  
sors without wait state. To eliminate bus contention the device has separate chip enable(CE), write enable(WE)  
and output enable (OE) controls.  
(Continued)  
PRODUCT LINE UP  
MBM29LV320TE/BE  
Part No.  
80  
90  
100  
VCC = 3.0 V  
100  
+0.3 V  
+0.6 V  
0.3 V  
Power Supply Voltage (V)  
Max Address Access Time (ns)  
Max CE Access Time (ns)  
Max OE Access Time (ns)  
VCC = 3.3 V  
0.3 V  
80  
80  
30  
90  
90  
35  
100  
35  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
63-ball plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  
(BGA-63P-M01)  

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