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MBM29LV320BE90PBT PDF预览

MBM29LV320BE90PBT

更新时间: 2024-01-14 12:47:36
品牌 Logo 应用领域
富士通 - FUJITSU 闪存存储内存集成电路
页数 文件大小 规格书
64页 816K
描述
32 M (4 M X 8/2 M X 16) BIT

MBM29LV320BE90PBT 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:PLASTIC, FBGA-63
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.7Is Samacsys:N
最长访问时间:90 ns备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B63JESD-609代码:e0
长度:11 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:63字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
切换位:YES类型:NOR TYPE
宽度:7 mmBase Number Matches:1

MBM29LV320BE90PBT 数据手册

 浏览型号MBM29LV320BE90PBT的Datasheet PDF文件第2页浏览型号MBM29LV320BE90PBT的Datasheet PDF文件第3页浏览型号MBM29LV320BE90PBT的Datasheet PDF文件第4页浏览型号MBM29LV320BE90PBT的Datasheet PDF文件第5页浏览型号MBM29LV320BE90PBT的Datasheet PDF文件第6页浏览型号MBM29LV320BE90PBT的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20894-1E  
FLASH MEMORY  
CMOS  
32 M (4 M × 8/2 M × 16) BIT  
MBM29LV320TE80/90/10  
MBM29LV320BE80/90/10  
DESCRIPTION  
The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words  
of 16 bits each. The device is offered in a 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed  
to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required  
for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.  
The standard device offers access times 80 ns, 90 ns and 100 ns, allowing operation of high-speed microproces-  
sors without wait state. To eliminate bus contention the device has separate chip enable(CE), write enable(WE)  
and output enable (OE) controls.  
(Continued)  
PRODUCT LINE UP  
MBM29LV320TE/BE  
Part No.  
80  
90  
100  
VCC = 3.0 V  
100  
+0.3 V  
+0.6 V  
0.3 V  
Power Supply Voltage (V)  
Max Address Access Time (ns)  
Max CE Access Time (ns)  
Max OE Access Time (ns)  
VCC = 3.3 V  
0.3 V  
80  
80  
30  
90  
90  
35  
100  
35  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
63-ball plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  
(BGA-63P-M01)  

与MBM29LV320BE90PBT相关器件

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MBM29LV320BE90TN SPANSION

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FLASH MEMORY
MBM29LV320BE90TN FUJITSU

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32 M (4 M X 8/2 M X 16) BIT
MBM29LV320BE90TN-E1 SPANSION

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Flash, 2MX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV320BE90TR FUJITSU

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32 M (4 M X 8/2 M X 16) BIT
MBM29LV320BE90TR SPANSION

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FLASH MEMORY
MBM29LV320BE90TR-E1 SPANSION

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Flash, 2MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV320TE FUJITSU

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32 M (4 M X 8/2 M X 16) BIT
MBM29LV320TE SPANSION

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FLASH MEMORY
MBM29LV320TE10 FUJITSU

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32 M (4 M X 8/2 M X 16) BIT
MBM29LV320TE10PBT FUJITSU

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32 M (4 M X 8/2 M X 16) BIT