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MBM29LV160TE90TN PDF预览

MBM29LV160TE90TN

更新时间： 2024-01-06 16:47:01
品牌 Logo 应用领域
富士通 - FUJITSU 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
59页 617K
描述
16M (2M X 8/1M X 16) BIT

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中文翻译

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MBM29LV160TE90TN 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：TSOP1-R, TSSOP48,.8,20
针数：48Reach Compliance Code：compliant
风险等级：5.18Is Samacsys：N
最长访问时间：90 ns其他特性：ALSO CONFIGURABLE AS 2M X 8
备用内存宽度：8启动块：TOP
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
JESD-609代码：e0长度：18.4 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16湿度敏感等级：3
功能数量：1部门数/规模：1,2,1,31
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1-R封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
反向引出线：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.035 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN LEAD端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30切换位：YES
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

MBM29LV160TE90TN 数据手册

 浏览型号MBM29LV160TE90TN的Datasheet PDF文件第2页浏览型号MBM29LV160TE90TN的Datasheet PDF文件第3页浏览型号MBM29LV160TE90TN的Datasheet PDF文件第4页浏览型号MBM29LV160TE90TN的Datasheet PDF文件第5页浏览型号MBM29LV160TE90TN的Datasheet PDF文件第6页浏览型号MBM29LV160TE90TN的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20883-2E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT  
-
70/90/12  
MBM29LV160TE/BE  
■ GENERAL DESCRIPTION  
The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words  
of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA  
packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0  
V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in  
standard EPROM programmers.  
The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-  
speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE),  
write enable (WE), and output enable (OE) controls.  
The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are  
written to the command register using standard microprocessor write timings. Register contents serve as input  
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch  
addresses and data needed for the programming and erase operations. Reading data out of the device is similar  
to reading from 5.0 V and 12.0 V Flash or EPROM devices.  
The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the  
Embedded ProgramTM* Algorithm which is an internal algorithm that automatically times the program pulse widths  
and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.  
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded EraseTM*  
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed  
before executing the erase operation. During erase, the device automatically times the erase pulse widths and  
verifies proper cell margins.  
Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)  
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word  
at a time using the EPROM programming mechanism of hot electron injection.  
(Continued)  
■ PRODUCT LINE UP  
Part No.  
MBM29LV160TE/160BE  
+0.3 V  
–0.3 V  
70  
—
—
—
VCC = 3.3 V  
Ordering Part No.  
+0.6 V  
–0.3 V  
90  
12  
VCC = 3.0 V  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
70  
70  
30  
90  
90  
35  
120  
120  
50  
1234567...59

中文翻译

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MBM29LV160TE90TN 替代型号

型号 品牌 替代类型 描述 数据表
M28W160CT90N6F NUMONYX

功能相似

 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160CT90N6E NUMONYX

功能相似

 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
MX29LV160CTTI-90G Macronix

功能相似

 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

与MBM29LV160TE90TN相关器件

型号 品牌 获取价格 描述 数据表
MBM29LV160TE-90TN SPANSION

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 		Flash, 1MX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV160TE-90TN FUJITSU

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 		1MX16 FLASH 3V PROM, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV160TE90TN-E1 SPANSION

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 		Flash, 1MX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV160TE90TR FUJITSU

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 		16M (2M X 8/1M X 16) BIT
MBM29LV160TE-90TR SPANSION

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 		Flash, 1MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV160TE-90TR FUJITSU

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 		1MX16 FLASH 3V PROM, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV160TE90TR-E1 SPANSION

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 		Flash, 1MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV160TM90 SPANSION

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 		FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
MBM29LV160TM90PBT SPANSION

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 		FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
MBM29LV160TM90PBT-E1 SPANSION

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 		Flash, 1MX16, 90ns, PBGA48, PLASTIC, FBGA-48

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