Datasheet > 存储 > 闪存> MBM29LV160BE90TN

MBM29LV160BE90TN

更新时间： 2024-11-29 22:27:27

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
59页	617K
描述
16M (2M X 8/1M X 16) BIT

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MBM29LV160BE90TN 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20883-2E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT

70/90/12

MBM29LV160TE/BE

■ GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

packages. The device is designed to be programmed in-system with the standard system 3.0 V V^CCsupply. 12.0

V V^PPand 5.0 V V^CCare not required for write or erase operations. The device can also be reprogrammed in

standard EPROM programmers.

The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-

speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE),

write enable (WE), and output enable (OE) controls.

The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E²PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the

Embedded Program^TM*Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase^TM*

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margins.

Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)

within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word

at a time using the EPROM programming mechanism of hot electron injection.

(Continued)

■ PRODUCT LINE UP

Part No.

MBM29LV160TE/160BE

+0.3 V

–0.3 V

—

V^CC= 3.3 V

Ordering Part No.

+0.6 V

–0.3 V

V^CC= 3.0 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

120

12 3 4 5 6 7...59

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MBM29LV160BE90TN 替代型号

型号	品牌	替代类型	描述	数据表
AM29LV160BB-90EI	AMD	功能相似	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90EI	AMD	功能相似	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90EC	AMD	功能相似	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

与MBM29LV160BE90TN相关器件

型号	品牌	获取价格	描述	数据表
MBM29LV160BE-90TN	FUJITSU	获取价格	1MX16 FLASH 3V PROM, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV160BE90TN-E1	SPANSION	获取价格	Flash, 1MX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV160BE90TR	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT
MBM29LV160BE-90TR	FUJITSU	获取价格	1MX16 FLASH 3V PROM, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV160BE-90TR	SPANSION	获取价格	Flash, 1MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV160BM90PBT	SPANSION	获取价格	FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
MBM29LV160BM90PBT-E1	SPANSION	获取价格	Flash, 1MX16, 90ns, PBGA48, PLASTIC, FBGA-48
MBM29LV160BM90TN	SPANSION	获取价格	FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
MBM29LV160BM90TN-E1	SPANSION	获取价格	Flash, 1MX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV160T	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

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