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MBM29LV160BE-90TN

更新时间： 2024-12-01 13:11:11
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
59页 617K
描述
1MX16 FLASH 3V PROM, 90ns, PDSO48, PLASTIC, TSOP1-48

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MBM29LV160BE-90TN 技术参数

生命周期：Obsolete零件包装代码：TSOP1
包装说明：PLASTIC, TSOP1-48针数：48
Reach Compliance Code：unknown风险等级：5.18
最长访问时间：90 ns备用内存宽度：8
JESD-30 代码：R-PDSO-G48长度：18.4 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
编程电压：3 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
宽度：12 mmBase Number Matches：1

MBM29LV160BE-90TN 数据手册

 浏览型号MBM29LV160BE-90TN的Datasheet PDF文件第2页浏览型号MBM29LV160BE-90TN的Datasheet PDF文件第3页浏览型号MBM29LV160BE-90TN的Datasheet PDF文件第4页浏览型号MBM29LV160BE-90TN的Datasheet PDF文件第5页浏览型号MBM29LV160BE-90TN的Datasheet PDF文件第6页浏览型号MBM29LV160BE-90TN的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20883-2E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT  
-
70/90/12  
MBM29LV160TE/BE  
■ GENERAL DESCRIPTION  
The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words  
of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA  
packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0  
V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in  
standard EPROM programmers.  
The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-  
speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE),  
write enable (WE), and output enable (OE) controls.  
The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are  
written to the command register using standard microprocessor write timings. Register contents serve as input  
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch  
addresses and data needed for the programming and erase operations. Reading data out of the device is similar  
to reading from 5.0 V and 12.0 V Flash or EPROM devices.  
The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the  
Embedded ProgramTM* Algorithm which is an internal algorithm that automatically times the program pulse widths  
and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.  
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded EraseTM*  
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed  
before executing the erase operation. During erase, the device automatically times the erase pulse widths and  
verifies proper cell margins.  
Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)  
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word  
at a time using the EPROM programming mechanism of hot electron injection.  
(Continued)  
■ PRODUCT LINE UP  
Part No.  
MBM29LV160TE/160BE  
+0.3 V  
–0.3 V  
70  
—
—
—
VCC = 3.3 V  
Ordering Part No.  
+0.6 V  
–0.3 V  
90  
12  
VCC = 3.0 V  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
70  
70  
30  
90  
90  
35  
120  
120  
50  
1234567...59

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与MBM29LV160BE-90TN相关器件

型号 品牌 获取价格 描述 数据表
MBM29LV160BE90TN-E1 SPANSION

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 		Flash, 1MX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV160BE90TR FUJITSU

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 		16M (2M X 8/1M X 16) BIT
MBM29LV160BE-90TR FUJITSU

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 		1MX16 FLASH 3V PROM, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV160BE-90TR SPANSION

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 		Flash, 1MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV160BM90PBT SPANSION

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 		FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
MBM29LV160BM90PBT-E1 SPANSION

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 		Flash, 1MX16, 90ns, PBGA48, PLASTIC, FBGA-48
MBM29LV160BM90TN SPANSION

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 		FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
MBM29LV160BM90TN-E1 SPANSION

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 		Flash, 1MX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV160T SPANSION

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 		FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29LV160T FUJITSU

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 		16M (2M xⅴ 8/1M x 16) BIT

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