Datasheet > 存储 > 闪存> MBM29LV016B-12PTR

MBM29LV016B-12PTR

更新时间： 2024-11-10 23:05:43

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
52页	573K
描述
16M (2M x 8) BIT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBM29LV016B-12PTR 数据手册

浏览型号MBM29LV016B-12PTR的Datasheet PDF文件第2页

浏览型号MBM29LV016B-12PTR的Datasheet PDF文件第3页

浏览型号MBM29LV016B-12PTR的Datasheet PDF文件第4页

浏览型号MBM29LV016B-12PTR的Datasheet PDF文件第5页

浏览型号MBM29LV016B-12PTR的Datasheet PDF文件第6页

浏览型号MBM29LV016B-12PTR的Datasheet PDF文件第7页

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20855-4E

FLASH MEMORY

CMOS

16M (2M × 8) BIT

MBM29LV016T^-80/-90/-12/MBM29LV016B^-80/-90/-12

■ FEATURES

• Single 3.0 V read, program and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E²PROMs

• Compatible with JEDEC-standard world-wide pinouts

40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)

• Minimum 100,000 program/erase cycles

• High performance

80 ns maximum access time

• Sector erase architecture

One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded Erase^TMAlgorithms

Automatically pre-programs and erases the chip or any sector

• Embedded program^TMAlgorithms

Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switches themselves to low power mode

• Low V^CCwrite inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector protection

Hardware method disables any combination of sectors from program or erase operations

• Sector Protection set function by Extended sector protect command

• Temporary sector unprotection

Temporary sector unprotection via the RESET pin

• In accordance with CFI (Common Flash Memory Interface)

Embedded Erase^TMand Embedded Program^TMare trademarks of Advanced Micro Devices, Inc.

12 3 4 5 6 7...52

中文翻译

下载PDF

与MBM29LV016B-12PTR相关器件

型号	品牌	获取价格	描述	数据表
MBM29LV016B-12PTR-E1	SPANSION	获取价格	Flash, 2MX8, 120ns, PDSO40, PLASTIC, REVERSE, TSOP1-40
MBM29LV016B-80	FUJITSU	获取价格	16M (2M x 8) BIT
MBM29LV016B-80PTN	FUJITSU	获取价格	16M (2M x 8) BIT
MBM29LV016B-80PTR	FUJITSU	获取价格	16M (2M x 8) BIT
MBM29LV016B-90	FUJITSU	获取价格	16M (2M x 8) BIT
MBM29LV016B-90PFTN	FUJITSU	获取价格	Flash, 2MX8, 90ns, PDSO40, PLASTIC, TSOP1-40
MBM29LV016B-90PTN	FUJITSU	获取价格	16M (2M x 8) BIT
MBM29LV016B-90PTR	FUJITSU	获取价格	16M (2M x 8) BIT
MBM29LV016B-90PTR-E1	SPANSION	获取价格	Flash, 2MX8, 90ns, PDSO40, PLASTIC, REVERSE, TSOP1-40
MBM29LV016T	FUJITSU	获取价格	16M (2M x 8) BIT