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MBM29F040C-90PD PDF预览

MBM29F040C-90PD

更新时间: 2024-11-22 22:58:07
品牌 Logo 应用领域
富士通 - FUJITSU 闪存存储内存集成电路
页数 文件大小 规格书
40页 411K
描述
4M (512K X 8) BIT

MBM29F040C-90PD 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:QFJ包装说明:PLASTIC, LCC-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.3最长访问时间:90 ns
其他特性:MINIMUM 100000 WRITE/ERASE CYCLES; AUTOMATIC WRITE命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:8
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.045 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD切换位:YES
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

MBM29F040C-90PD 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20842-4E  
FLASH MEMORY  
CMOS  
4M (512K × 8) BIT  
MBM29F040C-55/-70/-90  
FEATURES  
Single 5.0 V read, program and erase  
Minimizes system level power requirements  
Compatible with JEDEC-standard commands  
Uses same software commands as E2PROMs  
Compatible with JEDEC-standard byte-wide pinouts  
32-pin PLCC (Package suffix: PD)  
32-pin TSOP(I) (Package suffix: PF)  
32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)  
Minimum 100,000 write/erase cycles  
High performance  
55 ns maximum access time  
Sector erase architecture  
8 equal size sectors of 64K bytes each  
Any combination of sectors can be concurrently erased. Also supports full chip erase.  
Embedded Erase™ Algorithms  
Automatically pre-programs and erases the chip or any sector  
Embedded Program™ Algorithms  
Automatically writes and verifies data at specified address  
Data Polling and Toggle Bit feature for detection of program or erase cycle completion  
Low VCC write inhibit 3.2 V  
Sector protection  
Hardware method disables any combination of sectors from write or erase operations  
Erase Suspend/Resume  
Suspends the erase operation to allow a read data in another sector within the same device  
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.  

MBM29F040C-90PD 替代型号

型号 品牌 替代类型 描述 数据表
AM29F040-90JI AMD

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