Datasheet > 存储 > 闪存> MBM29DL163TE-70

MBM29DL163TE-70

更新时间： 2024-11-23 22:14:47

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
75页	1008K
描述
16M (2M X 8/1M X 16) BIT Dual Operation

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中文翻译

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数据手册

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MBM29DL163TE-70 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20880-1E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT ^{Dual Operation}

MBM29DL16XTE/BE^-70/90/12

■ FEATURES

• 0.23 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to Table 1)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

(Continued)

■ PRODUCT LINE UP

Part No.

V^CC= 3.3 V

MBM29DL16XTE/BE

+0.3 V

–0.3 V

—

Ordering Part No.

+0.6 V

–0.3 V

V^CC= 3.0 V

—

120

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

■ PACKAGES

48-pin plastic TSOP (I)

48-pin plastic FBGA

Marking Side

(FPT-48P-M20)

(FPT-48P-M19)

(BGA-48P-M11)

12 3 4 5 6 7...75

中文翻译

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与MBM29DL163TE-70相关器件

型号	品牌	获取价格	描述	数据表
MBM29DL163TE70PBT	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE-70PBT	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE-70PBT-E1	SPANSION	获取价格	Flash, 1MX16, 70ns, PBGA48, PLASTIC, FBGA-48
MBM29DL163TE70PFTN	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL163TE70PFTR	FUJITSU	获取价格	16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL163TE70TN	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE-70TN	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE-70TN-E1	SPANSION	获取价格	Flash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL163TE70TR	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE-70TR	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation