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MBM29DL162BE PDF预览

MBM29DL162BE

更新时间: 2024-11-19 22:25:51
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
75页 1008K
描述
16M (2M X 8/1M X 16) BIT Dual Operation

MBM29DL162BE 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20880-1E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT Dual Operation  
MBM29DL16XTE/BE-70/90/12  
FEATURES  
• 0.23 µm Process Technology  
• Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes (Refer to Table 1)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 3.3 V  
MBM29DL16XTE/BE  
+0.3 V  
–0.3 V  
70  
Ordering Part No.  
+0.6 V  
–0.3 V  
VCC = 3.0 V  
70  
70  
30  
90  
90  
90  
35  
12  
120  
120  
50  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
48-pin plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M20)  
(FPT-48P-M19)  
(BGA-48P-M11)  

与MBM29DL162BE相关器件

型号 品牌 获取价格 描述 数据表
MBM29DL162BE-12 FUJITSU

获取价格

16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162BE12PBT CYPRESS

获取价格

Flash, 1MX16, 120ns, PBGA48
MBM29DL162BE-12PBT SPANSION

获取价格

Flash, 1MX16, 12ns, PBGA48, PLASTIC, FBGA-48
MBM29DL162BE-12PBT-E1 SPANSION

获取价格

Flash, 1MX16, 12ns, PBGA48, PLASTIC, FBGA-48
MBM29DL162BE12TN CYPRESS

获取价格

Flash, 1MX16, 120ns, PDSO48
MBM29DL162BE-12TN SPANSION

获取价格

Flash, 1MX16, 12ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL162BE-12TN FUJITSU

获取价格

Flash, 1MX16, 12ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL162BE-12TN-E1 SPANSION

获取价格

Flash, 1MX16, 12ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL162BE12TR CYPRESS

获取价格

Flash, 1MX16, 120ns, PDSO48
MBM29DL162BE-12TR SPANSION

获取价格

Flash, 1MX16, 12ns, PDSO48, PLASTIC, REVERSE, TSOP1-48