Datasheet > MBM29DL162BD

MBM29DL162BD

更新时间： 2024-11-19 22:25:51

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
76页	1064K
描述
16M (2M x 8/1M x 16) BIT Dual Operation

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数据手册

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MBM29DL162BD 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20874-4E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT ^{Dual Operation}

MBM29DL16XTD/BD^-70/90/12

■ FEATURES

• 0.33 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to Table 1)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

(Continued)

■ PRODUCT LINE UP

Part No.

V^CC= 3.3 V

MBM29DL16XTD/MBM29DL16XBD

+0.3 V

–0.3 V

—

Ordering Part No.

+0.6 V

–0.3 V

V^CC= 3.0 V

—

120

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

■ PACKAGES

48-pin plastic TSOP (I)

48-pin plastic FBGA

Marking Side

(FPT-48P-M19)

(FPT-48P-M20)

(BGA-48P-M13)

Embedded Erase^TMand Embedded Program^TMare trademarks of Advanced Micro Devices, Inc.

12 3 4 5 6 7...76

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与MBM29DL162BD相关器件

型号	品牌	获取价格	描述	数据表
MBM29DL162BD-12PBT	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA48,
MBM29DL162BD12PFTN	FUJITSU	获取价格	1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL162BD-12PFTN	SPANSION	获取价格	Flash, 1MX16, 120ns, PDSO48,
MBM29DL162BD12PFTR	FUJITSU	获取价格	1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL162BD-12PFTR	SPANSION	获取价格	Flash, 1MX16, 120ns, PDSO48,
MBM29DL162BD-70PBT	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162BD-70PFTN	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162BD-70PFTR	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162BD-90PBT	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162BD-90PFTN	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation