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MBCR10J PDF预览

MBCR10J

更新时间: 2024-10-18 03:50:11
品牌 Logo 应用领域
智威 - ZOWIE 二极管
页数 文件大小 规格书
2页 95K
描述
MINIATURE SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

MBCR10J 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):0.9 V最大非重复峰值正向电流:30 A
元件数量:4最高工作温度:175 °C
最大输出电流:1 A最大重复峰值反向电压:600 V
子类别:Bridge Rectifier Diodes表面贴装:YES
Base Number Matches:1

MBCR10J 数据手册

 浏览型号MBCR10J的Datasheet PDF文件第2页 
MBCR10D THRU MBCR10M  
MINIATURE SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER  
Reverse Voltage - 200 to 1000 Volts  
Forward Current - 1.0 Ampere  
D
E
T
N
E
T
A
P
MBCR  
FEATURES  
Mounting Pad Layout  
0.213(5.40)  
0.205(5.20)  
* Internal Constructure with GPRC (Glass Passivated Rectifier Chip)  
inside  
0.165(4.20)  
0.157(4.00)  
0.132(3.35)  
0.128(3.25)  
* Lead free product  
* Leadless chip form , no lead damage  
* Solder Joint , No Wire bond & Lead Frame  
* Low profile package  
* For surface mounted applications  
* Built-in strain relief  
~
~
0.037(0.95)  
0.033(0.85)  
* Low power loss , High efficiency  
* High current capability  
0.040(1.0)  
0.031(0.8)  
* High surge capacity  
* Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
0.051(1.30)  
0.043(1.10)  
MECHANICAL DATA  
*Dimensions in inches and (millimeters)  
Case : Packed with FRP substrate and epoxy underfilled  
Terminals : Tin plated , solderable per MIL-STD-750,  
Method 2026  
SuperBridge with GPRC inside  
TM  
Polarity : Laser marking  
Weight : 0.07 gram  
TM  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature  
SYMBOLS MBCR10D  
MBCR10G  
MBCR10J  
MBCR10K  
MBCR10M UNITS  
unless otherwise specified.  
Volts  
Volts  
Volts  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current @ T  
A
=55oC  
I
(AV)  
1.0  
30  
Amps  
Amps  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
I
FSM  
@ IF=0.4 A  
@ IF=1.0 A  
0.9  
1.0  
V
F
Volts  
uA  
Maximum instantaneous forward voltage  
Maximum DC reverse current  
at rated DC blocking voltage  
@T  
@T  
C
=25oC  
=150oC  
5
IR  
C
200  
A2s  
pF  
I2t rating for fusing ( t < 8.3ms )  
I2t  
3.74  
Typical junction capacitance per element (NOTE 1)  
Typical thermal resistance, junction to ambient (NOTE 2)  
Operating junction and storage temperature range  
CJ  
25  
110  
oC / W  
oC  
R
JA  
TJ  
,TSTG  
-55 to +175  
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
(2) Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.  
2
Zowie Technology Corporation  
05/2004  

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