MBC50-x Series
MNOS Series Capacitor Beam Leads
Rev. V1
Features
Low Leakage Current
Low Insertion Loss
Excellent Long Term Stability
Description
The MBC50-x Series capacitors utilize a silicon
nitride dielectric over a thermally grown silicon
dioxide base. The resultant composite dielectric
exhibits low leakage current and insertion loss with
excellent long-term stability. The temperature
coefficient of capacitance is typically +55 ppm / ºC.
Electrical Specifications: TA = +25°C
Total
Capacitance
Reverse
Current
(IR)
Temperature
Coefficient
Voltage
(DWV)
(CT)
(TCC)
Part #
Package
pF
V
Min.
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
mΩ
ppm / °C
Typ.
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
+55
±20% Typ.
Min.
MBC50-1B12
MBC50-2B12
MBC50-3B12
MBC50-4B12
MBC50-6B12
MBC50-8B12
MBC50-10B12
MBC50-15B12
MBC50-20B12
MBC50-33B13
MBC50-47B13
MBC50-68B13
MBC50-82B13
MBC50-100B13
MBC50-0.2B14
MBC50-1.0B14
MBC50-1.5B14
MBC50-2.0B14
1
2
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
B12
B12
B12
B12
B12
B12
B12
B12
B12
B13
B13
B13
B13
B13
B14
B14
B14
B14
3
4
6
8
10
15
20
33
47
68
82
100
0.2
1.0
1.5
2.0
Test Conditions
1 MHz
25 V
-55°C - +200°C
1
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