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MB84VD22192EB-85-PBS PDF预览

MB84VD22192EB-85-PBS

更新时间: 2024-11-20 07:24:31
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
57页 1159K
描述
SPECIALTY MEMORY CIRCUIT, PBGA73, PLASTIC, FBGA-73

MB84VD22192EB-85-PBS 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50213-2E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM  
CMOS  
32M (× 8/×16) FLASH MEMORY &  
4M (× 8/×16) STATIC RAM  
MB84VD2218XEB-85/MB84VD2219XEB-85  
MB84VD2218XEE-85/MB84VD2219XEE-85  
FEATURES  
• Power Supply Voltage of 2.7 V to 3.3 V  
• High Performance  
85 ns maximum access time (Flash)  
85 ns maximum access time (SRAM)  
• Operating Temperature  
–25 °C to +85 °C  
• Package 73-ball BGA  
(Continued)  
PRODUCT LINE UP  
Flash Memory  
SRAM  
+0.3 V  
0.3 V  
+0.3 V  
0.3 V  
Power Supply Voltage (V)  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
VCCf* = 3.0 V  
VCCs* = 3.0 V  
85  
85  
35  
85  
85  
45  
* : Both VCCf and VCCs must be in recommended operation range when either part is being accessed.  
PACKAGE  
73-ball plastic FBGA  
(BGA-73P-M01)  

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