是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP16,.3 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最长访问时间: | 100 ns |
I/O 类型: | SEPARATE | JESD-30 代码: | R-PDIP-T16 |
JESD-609代码: | e0 | 内存密度: | 65536 bit |
内存集成电路类型: | PAGE MODE DRAM | 内存宽度: | 1 |
端子数量: | 16 | 字数: | 65536 words |
字数代码: | 64000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 64KX1 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP16,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | 5 V | 认证状态: | Not Qualified |
刷新周期: | 128 | 子类别: | DRAMs |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | MOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MB8264A-10P | FUJITSU |
获取价格 |
Page Mode DRAM, 64KX1, 100ns, MOS, PDIP16 | |
MB8264A-10TV | FUJITSU |
获取价格 |
Page Mode DRAM, 64KX1, 100ns, MOS, CQCC18 | |
MB8264A-10Z | FUJITSU |
获取价格 |
Page Mode DRAM, 64KX1, 100ns, MOS, CDIP16 | |
MB8264A12 | FUJITSU |
获取价格 |
Memory IC, | |
MB8264A-12 | FUJITSU |
获取价格 |
MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY | |
MB8264A-12M | FUJITSU |
获取价格 |
Page Mode DRAM, 64KX1, 120ns, MOS, PDIP16 | |
MB8264A-12P | FUJITSU |
获取价格 |
Page Mode DRAM, 64KX1, 120ns, MOS, PDIP16 | |
MB8264A-12TV | FUJITSU |
获取价格 |
Page Mode DRAM, 64KX1, 120ns, NMOS, CQCC18, FRIT SEALED, CERAMIC, LCC-18 | |
MB8264A-12-W | FUJITSU |
获取价格 |
64KX1 PAGE MODE DRAM, 120ns, CDIP16, CERDIP-16 | |
MB8264A-12WC | FUJITSU |
获取价格 |
Page Mode DRAM, 64KX1, 120ns, MOS, CDIP16 |