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MB60DU12ST PDF预览

MB60DU12ST

更新时间: 2024-11-18 18:09:51
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扬杰 - YANGJIE /
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MB60DU12ST 数据手册

 浏览型号MB60DU12ST的Datasheet PDF文件第2页浏览型号MB60DU12ST的Datasheet PDF文件第3页浏览型号MB60DU12ST的Datasheet PDF文件第4页浏览型号MB60DU12ST的Datasheet PDF文件第5页 
RoHS  
MB60DU12ST  
COMPLIANT  
1200V SiC Power Module  
Dual Diode Pack  
VDC  
IF  
TJ,max  
1200V  
2× 30A  
175°C  
Applications  
Welding equipment  
Uninterruptible power supply (UPS)  
High frequency power supply  
Induction heating  
High speed rectifiers  
Features  
Circuit  
SiC Schottky Diode  
-
Zero reverse recovery  
-
-
-
Zero forward recovery  
Temperature independent switching behavior  
Positive temperature coefficient on VF  
Very low stray inductance  
Low forward voltage  
Isolated package (SOT-227)  
Low noise switching  
RoHS compliant  
Absolute Maximum Ratings (TJ=25° C unless otherwise specified, per leg)  
Parameter  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
Symbol  
VRRM  
Test Conditions  
Value  
1200  
Unit  
T =25  
V
°C  
J
T =25  
VDC  
1200  
70  
V
°C  
J
TC=25° C, TJ=175°C  
Continuous Forward Current  
IF  
T =146° C  
30  
A
, TJ=175°C  
C
T =135° C  
35  
, TJ=175°C  
C
Non-Repetitive Peak Forward Surge Current  
I2t Value  
IFSM  
∫I2dt  
PTot  
TJ  
TC=25° C, TP=10ms, Half Sine Wave  
TC=25° C, TP=10ms  
225  
A
253  
A2s  
W
Power Dissipation  
TC=25° C  
242  
Junction Temperature  
Storage Temperature  
-55175  
-55175  
°C  
°C  
TSTG  
www.21yangjie.com  
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