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MB358

更新时间: 2024-11-12 20:20:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 128K
描述
Bridge Rectifier Diode, 1 Phase, 35A, 800V V(RRM), Silicon, METAL, MB-35, 4 PIN

MB358 技术参数

生命周期:Transferred包装说明:S-MUFM-D4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.23
Is Samacsys:N配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:S-MUFM-D4
JESD-609代码:e0最大非重复峰值正向电流:400 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最大输出电流:35 A封装主体材料:METAL
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:TIN LEAD端子形式:SOLDER LUG
端子位置:UPPERBase Number Matches:1

MB358 数据手册

 浏览型号MB358的Datasheet PDF文件第2页 
MB3505  
THRU  
MB3510  
21201 Itasca St.  
Chatsworth, CA 91311  
Phone: (818) 701-4933  
Fax: (818) 701-4939  
Features  
35 Amp Single Phase  
Bridge Rectifier  
Mounting Hole For #8 Screw  
High Conductivity Metal Case  
Any Mounting Position  
Surge Rating Of 400 Amps  
50 to 1000 Volts  
MB-35  
Maximum Ratings  
Operating Temperature: -55°C to +175°C  
B
Storage Temperature: -55°C to +175°C  
Maximum Thermal Resistance 1.2°C/W  
Maximum  
Recurrent  
Maximum DC  
Blocking  
Microsemi  
Maximum  
C
Part Number Peak Reverse  
Voltage  
RMS Voltage  
Voltage  
MB3505  
MB351  
MB352  
MB354  
MB356  
MB358  
MB3510  
50V  
100V  
200V  
400V  
600V  
800V  
1000v  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000v  
E
140V  
280V  
420V  
560V  
700V  
G
+
AC  
D
A
H
-
AC  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
35.0A  
TJ = 55°C  
J
Peak Forward Surge  
Current  
Maximum Forward  
Voltage Drop Per  
Element  
IFSM  
400A  
8.3ms, half sine  
A
VF  
1.1V  
IFM = 17.5A per  
element;  
TJ = 25°C*  
DIMENSIONS  
MM  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MIN  
---  
IR  
DIM  
A
B
C
D
E
G
H
MAX  
1.140  
.452  
.480  
.732  
.677  
---  
MIN  
---  
---  
10.80  
17.54  
16.20  
4.77  
16.10  
13.80  
MAX  
29.00  
11.50  
12.20  
18.6  
NOTE  
10µA  
1.0mA  
TJ = 25°C  
TJ = 100°C  
---  
.425  
.693  
.637  
.188  
.633  
.543  
*Pulse test: Pulse width 300 µsec, Duty cycle 1%  
17.20  
---  
.673  
.582  
17.10  
14.80  
J

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