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MB2S

更新时间： 2024-02-28 12:57:10
品牌 Logo 应用领域
ASEMI 二极管IOT
页数 文件大小 规格书
2页 92K
描述
0.5A Single-Phase Glass Passivated Bridge Rectifiers

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中文翻译

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MB2S 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.57其他特性：UL RECOGNIZED
最小击穿电压：200 V配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：1 VJESD-30 代码：R-PDSO-G4
湿度敏感等级：1最大非重复峰值正向电流：35 A
元件数量：4相数：1
端子数量：4最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：0.5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
最大重复峰值反向电压：200 V子类别：Bridge Rectifier Diodes
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：10
Base Number Matches：1

MB2S 数据手册

 浏览型号MB2S的Datasheet PDF文件第2页 
MB05S thru MB10S  
0.5 A Single-Phase Glass Passivated Bridge Rectifiers  
Rectifier Reverse Voltage 50 to 1000V  
MINI-DIP  
Features  
_
+
This series is UL listed under the Recognized  
Component Index, file number E142814  
Ideal for surface mount application  
The plastic material used carries Underwriters  
Laboratory flammability recognition 94V-0  
Surge overload ratings to 30 amperes  
High temperature soldering guaranteed 265 C/10  
seconds at 5 lbs (2.3kg) tension  
~ ~  
7.0 MAX.  
+
2.5  
1.1 0.2  
+
0.2  
+
4.0 0.2  
+
Mechanical Data  
Case: Molded plastic  
2.5 0.2  
Terminals: Plated leads solderable per MIL-STD-202,  
Method 208  
+
0.2  
1.5 0.2  
0.9 0.2  
0.65 0.15  
+
0.25 0.1  
+
Polarity: Marked on body  
+
4.7 0.2  
+
Mounting Position: Any  
Weight: 0.0044 ounce, 0.125 grams (approx)  
Dimensions in millimeters(1mm =0.0394")  
Maximum Ratings & Thermal Characteristics  
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.  
For Capacitive load derate current by 20%.  
B05S B1S  
B2S  
200  
140  
200  
B4S  
400  
280  
400  
B6S  
600  
420  
600  
B8S B10S  
unit  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
V
Maximum repetitive peak reverse voltage  
Maximum RMS bridge input voltage  
Maximum DC blocking voltage  
50  
35  
50  
100  
70  
800  
560  
800  
1000  
700  
V
V
100  
1000  
0.5  
0.8*  
Maximum average forward rectified  
output current at TA=40 C (*3)  
IF(AV)  
A
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC Method)  
30  
A
IFSM  
I2 t  
2sec  
A
Rating for fusing ( t<8.3ms)  
10  
110  
25.0  
C /W  
pF  
Typical thermal resistance per element (1)  
Typical junction capacitance per element (2)  
ReJA  
Cj  
TJ,  
TSTG  
Operating junction and storage temperature  
range  
C
-55 to + 150  
Electrical Characteristics  
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.  
For Capacitive load derate by 20 %.  
B05S B1S  
B2S  
B4S  
1.1  
B6S  
B8S B10S  
Unit  
Parameter  
Symbol  
Maximum instantaneous forward voltage drop  
per leg at 0.5A  
VF  
V
A
10  
500  
Maximum DC reverse current at rated TA =25 C  
DC blocking voltage per element  
IR  
TA =125 C  
Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.  
(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.  
(3)R-load on aluminum substrate TA=25 C.  
www.asemi.tw  
12

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