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MB1S-BP PDF预览

MB1S-BP

更新时间: 2024-11-09 21:10:31
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 152K
描述
Bridge Rectifier Diode, 1 Phase, 0.5A, 100V V(RRM), Silicon, PLASTIC, MBS-1, 4 PIN

MB1S-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PLASTIC, MBS-1, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.06其他特性:UL RECOGNIZED
最小击穿电压:100 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:35 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

MB1S-BP 数据手册

 浏览型号MB1S-BP的Datasheet PDF文件第2页浏览型号MB1S-BP的Datasheet PDF文件第3页 
M C C  
MB05S  
THRU  
MB10S  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
0.5 Amp Single Phase  
Glass Passivated  
Bridge Rectifier  
Glass Passivated Diode Construction  
High Surge Overload Rating:35A Peak  
Saves Space On Printed Circuit Board  
o
High Temperature Soldering Guaranteed:260 C/10 Second  
UL Recognized File # E165989  
50 to 1000 Volts  
Mechanical Data  
Case Material:Molded Plastic. UL Flammability  
Classification Rating 94V-0  
MBS -1  
Teminals: Plated leads Solderable per MIL-STD-750,Method 2026  
Moisture Sensitiviy:Level 1 per J-STD-020C  
MCC  
Part  
Number  
Maximum  
Recurrent  
Marking Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
50V  
-
Device  
D
B
E
+
MB05S  
MB1S  
MB2S  
MB4S  
MB6S  
MB8S  
MB10S  
MB05S  
MB1S  
MB2S  
MB4S  
MB6S  
MB8S  
MB10S  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
100V  
200V  
F
C
A
140V  
280V  
420V  
480V  
700V  
400V  
600V  
Notch in case  
800V  
1000V  
K
M
Electrical Characteristics @ 25OC Unless Otherwise Specified  
J
0.5 A(1)  
0.8 A(2)  
35A  
See Fig.1  
G
Average Forward  
Current  
IF(AV)  
N
H
Peak Forward Surge  
Current  
Maximum  
IFSM  
8.3ms, half sine  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢂꢂ  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.0V  
IFM = 0.4A;  
TA = 25OC  
ꢇ ꢇ ꢇ ꢇ ꢁꢄꢈ  
ꢉꢃꢅ  
ꢀꢁꢂ  
ꢂꢁꢄ  
.252  
ꢎꢏꢐꢑ  
ꢂꢊꢋ  
.275  
ꢎꢒꢏ6  
.165  
.195  
.031  
.106  
.008  
ꢂꢁꢄ  
6.40  
ꢓꢎꢔꢒ  
ꢂꢊꢋ  
7.00  
2.70  
4.20  
4.95  
0.80  
2.70  
0.20  
ꢄꢆꢌꢃ  
OC  
IR  
TA = 25  
5uA  
100uA  
C
D
.150  
.179  
.019  
.090  
.004  
3.80  
4.55  
0.50  
2.30  
0.10  
TA = 125 O  
C
85O /W(1)  
Typical Thermal  
Resistance  
per leg  
R
thJA  
C
OC  
(2)  
.027  
.058  
.195  
.039  
.043  
.062  
.205  
.049  
0.70  
1.47  
4.95  
0.99  
1.10  
1.57  
5.21  
1.24  
RthJA  
RthJL  
70 /W  
20OC/W(1)  
13pF  
M
Typical Junction  
Capacitance  
CJ  
Measured at  
1.0MHz, VR=4.0V  
t<8.30ms  
N
.006  
.016  
0.15  
0.41  
Rating For Fusing  
Operating Junction  
and Storage  
I2t  
TJ  
5.0A2s  
-55to+150  
Mounting Pad Layout  
0.023 MIN.  
(0.58 MIN.)  
OC  
TSTG  
Temperature Range  
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05”(1.3 x 1.3mm)pads  
(2) On aluminum substrate P.C.B. with an area of 0.8” x 0.8”(20 x 20mm) mounted  
on 0.05 x 0.05”(1.3x 1.3mm) solder pad  
0.272 MAX.  
(6.91 MAX.)  
0.030 MIN.  
(0.76 MIN.)  
0.105 (2.67)  
0.095 (2.41)  
www.mccsemi.com  
1 of 3  
Revision: 10  
2007/07/26  

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