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MB1F~MB10F PDF预览

MB1F~MB10F

更新时间: 2024-04-09 19:02:45
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
3页 382K
描述
Bridge Rectifiers

MB1F~MB10F 数据手册

 浏览型号MB1F~MB10F的Datasheet PDF文件第2页浏览型号MB1F~MB10F的Datasheet PDF文件第3页 
MB1F THRU MB10F  
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER  
FEATURES:  
PINNING  
Glass Passivated Chip Junction  
Reverse Voltage - 100 to 1000 V  
Forward Current - 0.8 A  
PIN  
1
DESCRIPTION  
Input Pin(~)  
Input Pin~)  
2
High Surge Current Capability  
Designed for Surface Mount Application  
Output Anode(+)  
Output Cathode(-)  
3
4
MECHANICAL DATA  
3
• Case: MBF  
4
2
1
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 75mg 0.0026oz  
MBF Package  
Maximum Ratings and Electrical characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.  
Symbols  
VRRM  
MB1F  
100  
70  
MB2F  
200  
140  
200  
MB4F  
400  
MB6F  
600  
MB8F  
800  
560  
800  
MB10F  
1000  
700  
Parameter  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS voltage  
Units  
V
V
V
VRMS  
280  
420  
Maximum DC Blocking Voltage  
VDC  
100  
400  
600  
1000  
Average Rectified Output Current  
at Tc = 125 °C  
IO  
0.8  
A
A
Peak Forward Surge Current 8.3 ms Single Half  
Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
IFSM  
30  
Maximum Forward Voltage at 0.8 A  
VF  
IR  
1.1  
V
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@TA=25 °C  
@TA=125 °C  
5
40  
μA  
pF  
Typical Junction CapacitanceNote1)  
Typical Thermal ResistanceNote2)  
Operating and Storage Temperature Range  
Cj  
13  
RθJA  
RθJC  
90  
30  
°C/W  
°C  
Tj, Tstg  
-55 ~ +150  
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.  
2. Mounted on glass epoxy PC board with 4×1.5"×1.5"3.81×3.81 cmcopper pad.  
Page 1 of 3  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2018 Rev 2.0  

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