Datasheet > MB05F

MB05F

更新时间： 2024-09-20 14:51:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	968K
描述
MBF

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中文翻译

获取价格

数据手册

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MB05F 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

MBF Plastic-Encapsulate Bridge Rectifier

General Purpose Bridge Rectifier

MB05F THRU MB10F

Features

MBF

●I_F(AV)

0.8A

●VRRM

50V-1000V

●High surge current capability

●

Glass passivated chip

Applications

●

General purpose 1 phase Bridge

rectifier applications

Marking

● MBXXF

X From 05 To 10

05F 1F 2F 4F

Conditions

Item

ymbol Unit

6F 8F 10F

Repetitive Peak Reverse

Voltage

V_RRM

100 200 400 600 800 1000

70 140 280 420 560 700

Maximum RMS Voltage

RMS

100 200 400 600 800 1000

0.8

Maximum DC blocking Voltage

On alumina substrate

Average Rectified Output

Current

60Hz sine wave,

R-load, Ta=25℃

I_O

On glass-epoxi substrate

0.5

Surge(Non-

repetitive)Forward Current

I_FSM

I²t

60H_Z

sine wave, 1 cycle, T_j=25℃

half

A²S

1ms≤t<8.3ms Tj=25℃，Rating of per diode

Current Squared Time

3.7

Operation Junction and

Storage Temperature Range

T_J,T_stg

℃

-55 ~+150

Electrical Characteristics（T_a=25℃ Unless otherwise specified）

Symbol Unit

Test Condition

Max

Item

V_FM

1.0

Peak Forward Voltage

I_FM=0.4A, Pulse measurement, Rating of per diode

I_RRM1

I_RRM2

5.0

μA

Maximum DC reverse current

at rated DC blocking voltage

TA=25

Peak Reverse Current

Thermal Resistance

500

TA=125

134

Between junction and ambient, On alumina substrate

Between junction and ambient, On glass-epoxi substrate

J-A

J-L

℃/W

Between junction and lead

Typical junction capactiance

per diode

Measured at 1.0MHz and applied reverse voltage of 4.0 volts.

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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