This product complies with RoHS Directive (EU 2002/95/EC).
Zener Diodes
MAZ8xxxG Series
Silicon planar type
For stabilization of power supply
Features
Package
Extremely low noise voltage caused from the diode (2.4 V to
39V, 1/3 to 1/10 of our conventional MAZ3xxx series)
Extremely good rising performance (in the low-current range)
Easy-to-select the optimum diode because of their finely divided
zener-voltage ranks
ꢀCode
SMini2-F3
ꢀPin Name
1: Anode
2: Cathode
Guaranteed reliability, equivalent to that of conventional products
(Mini type package)
Marking symbol
Allowing to reduce the mounting area, thickness and weight
substantially, compared with those of the conventional products
Allowing both reflow and flow mode of automatic soldering
Allowing automatic mounting by an existing chip mounter
Refer to the list of the electrical
characteristics within part numbers
Absolute Maximum Ratings Ta = 25°C
Parameter
Repetitive peak forward current
Total power dissipation *
Junction temperature
Symbol
IFRM
PT
Rating
200
Unit
mA
mW
°C
150
Tj
150
Storage temperature
T
stg
–55 to +150
°C
Note) : P = 150 mW achieved with a printed circuit board.
*
T
Common Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
VF
Conditions
Min
Typ
Max
Unit
V
Forward voltage
IF = 10 mA
0.9
1.0
1
Zener voltage *
VZ
IZ
Specified value
Specified value
Specified value
Specified value
Specified value
V
Zener rise operating resistance
Zener operating resistance
Reverse current
RZK
RZ
IZ
W
Refer to the list of the
IZ
electrical characteristics
within part numbers
W
IR
VR
IZ
mA
mV/°C
2
Temperature coefficient of zener voltage *
SZ
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for VZ measurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
4. 1: V guaranteed 20 ms after current flow.
*
Z
2: T = 25°C to 150°C
*
j
Publication date: May 2009
SKE00032DED
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