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MAZ8033G0L PDF预览

MAZ8033G0L

更新时间: 2024-11-19 15:40:47
品牌 Logo 应用领域
松下 - PANASONIC 测试光电二极管
页数 文件大小 规格书
8页 680K
描述
Zener Diode, 3.3V V(Z), 6.06%, 0.15W, Silicon, Unidirectional, ROHS COMPLIANT, SMINI2-F3, 2 PIN

MAZ8033G0L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:130 ΩJESD-30 代码:R-PDSO-F2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.15 W认证状态:Not Qualified
标称参考电压:3.3 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:6.06%
工作测试电流:5 mABase Number Matches:1

MAZ8033G0L 数据手册

 浏览型号MAZ8033G0L的Datasheet PDF文件第2页浏览型号MAZ8033G0L的Datasheet PDF文件第3页浏览型号MAZ8033G0L的Datasheet PDF文件第4页浏览型号MAZ8033G0L的Datasheet PDF文件第5页浏览型号MAZ8033G0L的Datasheet PDF文件第6页浏览型号MAZ8033G0L的Datasheet PDF文件第7页 
This product complies with RoHS Directive (EU 2002/95/EC).  
Zener Diodes  
MAZ8xxxG Series  
Silicon planar type  
For stabilization of power supply  
Features  
Package  
Extremely low noise voltage caused from the diode (2.4 V to  
39V, 1/3 to 1/10 of our conventional MAZ3xxx series)  
Extremely good rising performance (in the low-current range)  
Easy-to-select the optimum diode because of their nely divided  
zener-voltage ranks  
Code  
SMini2-F3  
Pin Name  
1: Anode  
2: athode  
Guaranteed reliability, equivalent to that of conventional products  
(Mini type package)  
symbol  
Allowing to reduce the mounting area, thickness and weight  
substantially, compared with those of the conventionaprodts  
Allowing both reow and ow mode of automatic solderi
Allowing automatic mounting by an existing chip munte
Refer to the list of the electrical  
caracteristics within part numbers  
Absolute Maximum Ratings T25°C  
Parameter  
Repetitive peak forward curent  
Total power dissipation
Junction temperaure  
Symbol  
IFRM  
P
Rating  
200  
Unit  
mA  
mW  
°C  
50  
T
150  
Storage tmperature  
T
stg  
–55 to +150  
°C  
Note) : P = 150 mW achieved with a printecircuiboard.  
*
T
Common Eracteristics Ta = 25°C±3°C  
Param
Symbol  
VF  
Conditions  
Min  
Typ  
Max  
Unit  
V
Forward voltage  
IF = 10 mA  
0.9  
1.0  
1
Zener voltage *  
VZ  
IZ  
Specied value  
Specied value  
Specied value  
Specied value  
Specied value  
V
Zener rise operating resistance  
Zener operating resistance  
Reverse current  
RZK  
RZ  
IZ  
W
Refer to the list of the  
IZ  
electrical characteristics  
within part numbers  
W
IR  
VR  
IZ  
mA  
mV/°C  
2
Temperature coefcient of zener voltage *  
SZ  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Absolute frequency of input and output is 5 MHz.  
3. The temperature must be controlled 25°C for VZ measurement.  
VZ value measured at other temperature must be adjusted to VZ (25°C)  
4. 1: V guaranteed 20 ms after current ow.  
*
Z
2: T = 25°C to 150°C  
*
j
Publication date: May 2009  
SKE00032DED  
1

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