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69F1608RPFE PDF预览

69F1608RPFE

更新时间: 2024-01-12 13:23:53
品牌 Logo 应用领域
麦斯威 - MAXWELL 闪存存储内存集成电路
页数 文件大小 规格书
33页 817K
描述
128 Megabit (16M x 8-Bit) Flash Memory Module

69F1608RPFE 技术参数

生命周期:Transferred零件包装代码:DFP
包装说明:DFP-24针数:24
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.67
最长访问时间:35 ns数据轮询:NO
JESD-30 代码:R-XDFP-F24长度:28.956 mm
内存密度:134217728 bit内存集成电路类型:FLASH MODULE
内存宽度:8功能数量:1
部门数/规模:2K端子数量:24
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:16MX8
封装主体材料:UNSPECIFIED封装代码:GDFP
封装等效代码:FL24,1.1封装形状:RECTANGULAR
封装形式:FLATPACK, GUARD RING页面大小:512 words
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES筛选级别:38535V;38534K;883S
座面最大高度:8.5344 mm部门规模:8K
最大待机电流:0.0004 A子类别:Flash Memories
最大压摆率:0.04 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
切换位:NO类型:SLC NAND TYPE
宽度:20.828 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

69F1608RPFE 数据手册

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69F1608  
128 Megabit (16M x 8-Bit)  
Flash Memory Module  
Logic Diagram (1 of 4 Die)  
FEATURES:  
DESCRIPTION:  
• Single 5.0 V supply  
Organization:  
Maxwell Technologies’ 69F1608 high-performance flash mem-  
ory is a 16M x 8-bit NAND Flash Memory with a spare 128K  
(131,072) x 8-bit. A program operation programs the 528-byte  
page in 250 µs and an erase operation can be performed in 2  
ms on an 8K-byte block. Data within a page can be read out at  
50 ns cycle time per byte. The on-chip write controller auto-  
mates all program and erase functions, including pulse repeti-  
tion, where required, and internal verify and margining of data.  
Even write-intensive systems can take advantage of the  
69F1608s extended reliability of 1,000,000 program/erase  
cycles by providing either ECC (Error Correction Code) or real  
time mapping-out algorithm. These algorithms have been  
implemented in many mass storage applications. The spare  
16 bytes of a page combined with the other 512 bytes can be  
utilized by system-level ECC. The 69F1608 is an optimum  
solution for large non-volatile storage applications such as  
solid state data storage, digital voice recorders, digital still  
cameras and other applications requiring nonvolatility.  
- Memory cell array: (4M + 128k) bit x 8bit  
- Data register: (512 + 16) bit x 8bit  
- Contains 4 (32 Megabit) Die  
Automatic program and erase  
- Page program: (512 + 16) Byte  
- Block erase: (8K + 256) Byte  
- Status register  
• 528-Byte page read operation  
- Random access: 10 µs (max)  
- Serial page access: 50 ns (min)  
• Fast write cycle time  
- Program time: 250 µs (typ)  
- Block erase time: 2 ms (typ)  
• Command/address/data multiplexed I/O port  
Hardware data protection  
- Program/erase lockout during power transitions  
• Reliable CMOS floating-gate technology  
- Endurance: 1,000,000 program/erase cycles  
- Data retention: 10 years  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. Capable of surviving in space environments, the  
69F1608 is ideal for satellite, spacecraft, and space probe  
missions. It is available with packaging and screening up to  
Maxwell Technologies self-defined Class K.  
• Command register operation  
01.07.05 REV 2  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2005 Maxwell Technologies  
All rights reserved.  

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