是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | CERAMIC, DIP-8 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.12 |
Is Samacsys: | N | 可调阈值: | NO |
模拟集成电路 - 其他类型: | POWER SUPPLY MANAGEMENT CIRCUIT | JESD-30 代码: | R-GDIP-T8 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
信道数量: | 1 | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 245 | 电源: | 5 V |
认证状态: | Not Qualified | 筛选级别: | MIL-STD-883 Class B |
座面最大高度: | 5.08 mm | 子类别: | Power Management Circuits |
最大供电电流 (Isup): | 0.5 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.2 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MAX706ARESA+ | MAXIM |
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