是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, DIP16,.3 | 针数: | 16 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.08 |
模拟集成电路 - 其他类型: | SINGLE-ENDED MULTIPLEXER | JESD-30 代码: | R-GDIP-T16 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
负电源电压最大值(Vsup): | -18 V | 负电源电压最小值(Vsup): | -4.5 V |
标称负供电电压 (Vsup): | -15 V | 信道数量: | 8 |
功能数量: | 1 | 端子数量: | 16 |
标称断态隔离度: | 68 dB | 最大通态电阻 (Ron): | 3000 Ω |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装等效代码: | DIP16,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 245 |
电源: | +-15 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最大信号电流: | 0.02 A |
子类别: | Multiplexer or Switches | 最大供电电流 (Isup): | 0.7 mA |
最大供电电压 (Vsup): | 18 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 15 V | 表面贴装: | NO |
最长断开时间: | 500 ns | 最长接通时间: | 750 ns |
切换: | BREAK-BEFORE-MAKE | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 7.62 mm | Base Number Matches: | 1 |
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